Inventor · disambiguated record
Hsu-Yu Chang
Also filed as: CHANG HSU-YU
32 granted patents·9 pending applications·85 citations·filing 2005–2025
94Inventor score
Top patents by PatentIndex Score
41 records- 0196US11094782B1Gate-all-around integrated circuit structures having depopulated channel structuresINTEL CORP·Filed 2020·Granted Aug 17, 2021·8 cites·25 claims
- 0295US7192818B1Polysilicon thin film fabrication methodUNIV NAT TAIWAN·Filed 2005·Granted Mar 20, 2007·57 cites·9 claims
- 0388US11437483B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2020·Granted Sep 6, 2022·2 cites·25 claims
- 0483US9947585B2Multi-gate transistor with variably sized finINTEL CORP·Filed 2014·Granted Apr 17, 2018·5 cites·24 claims
- 0581US10756210B2Depletion mode gate in ultrathin FINFET based architectureINTEL CORP·Filed 2016·Granted Aug 25, 2020·3 cites·10 claims
- 0679US12349411B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 0778US10192969B2Transistor gate metal with laterally graduated work functionINTEL CORP·Filed 2014·Granted Jan 29, 2019·4 cites·11 claims
- 0876US12369358B2Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devicesINTEL CORP·Filed 2019·Granted Jul 22, 2025·2 cites·18 claims
- 0975US12453145B2Single gated 3D nanowire inverter for high density thick gate SoC applicationsINTEL CORP·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 1075US11862703B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1173US12249622B2Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applicationsINTEL CORP·Filed 2019·Granted Mar 11, 2025·1 cites·18 claims
- 1269US10854607B2Isolation well doping with solid-state diffusion sources for finFET architecturesINTEL CORP·Filed 2020·Granted Dec 1, 2020·0 cites·20 claims
- 1368US10964690B2Resistor between gates in self-aligned gate edge architectureINTEL CORP·Filed 2017·Granted Mar 30, 2021·1 cites·20 claims
- 1468US2025185317A1Nanoribbon thick gate devices with differential ribbon spacing and width for soc applicationsINTEL CORP·Filed 2025·Application pending·0 cites
- 1567US11581404B2Gate-all-around integrated circuit structures having depopulated channel structuresINTEL CORP·Filed 2021·Granted Feb 14, 2023·0 cites·24 claims
- 1667US10811751B2Monolithic splitter using re-entrant poly silicon waveguidesINTEL CORP·Filed 2016·Granted Oct 20, 2020·1 cites·25 claims
- 1766US10559688B2Transistor with thermal performance boostINTEL CORP·Filed 2016·Granted Feb 11, 2020·1 cites·20 claims
- 1865US2025089312A1Gate-all-around integrated circuit structures having differential nanowire thickness and gate oxide thicknessINTEL CORP·Filed 2023·Application pending·0 cites
- 1964US10643999B2Doping with solid-state diffusion sources for finFET architecturesINTEL CORP·Filed 2019·Granted May 5, 2020·0 cites·15 claims
- 2061US11791380B2Single gated 3D nanowire inverter for high density thick gate SOC applicationsINTEL CORP·Filed 2019·Granted Oct 17, 2023·0 cites·24 claims
- 2159US2025210460A1Transistor performance improvement for stacked devices using selective front and backside contact metalsINTEL CORP·Filed 2023·Application pending·0 cites
- 2258US10340273B2Doping with solid-state diffusion sources for finFET architecturesINTEL CORP·Filed 2017·Granted Jul 2, 2019·0 cites·16 claims
- 2358US2025221017A1Hv transistors & resistors for stacked transistor architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 2457US10090304B2Isolation well doping with solid-state diffusion sources for FinFET architecturesHAFEZ WALID M·Filed 2013·Granted Oct 2, 2018·0 cites·18 claims
- 2557US2025120143A1Extended drain transistor for high voltage applicationsINTEL CORP·Filed 2023·Application pending·0 cites
- 2657US2025113561A1Stacked transistors with strain materials on source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 2755US2019097057A1Non-linear fin-based devicesINTEL CORP·Filed 2018·Application pending·0 cites
- 2852US12317585B2Adjacent gate-all-around integrated circuit structures having non-merged epitaxial source or drain regionsINTEL CORP·Filed 2020·Granted May 27, 2025·0 cites·16 claims
- 2952US10761264B2Transmission lines using bending fins from local stressINTEL CORP·Filed 2016·Granted Sep 1, 2020·0 cites·25 claims
- 3052US10164115B2Non-linear fin-based devicesINTEL CORP·Filed 2014·Granted Dec 25, 2018·0 cites·22 claims
- 3150US11996403B2ESD diode solution for nanoribbon architecturesINTEL CORP·Filed 2019·Granted May 28, 2024·0 cites·11 claims
- 3249US12040395B2High voltage extended-drain MOS (EDMOS) nanowire transistorsINTEL CORP·Filed 2019·Granted Jul 16, 2024·0 cites·21 claims
- 3349US10854757B2FINFET based junctionless wrap around structureINTEL CORP·Filed 2016·Granted Dec 1, 2020·0 cites·20 claims
- 3448US11563000B2Gate endcap architectures having relatively short vertical stackINTEL CORP·Filed 2020·Granted Jan 24, 2023·0 cites·15 claims
- 3548US10763209B2MOS antifuse with void-accelerated breakdownINTEL CORP·Filed 2014·Granted Sep 1, 2020·0 cites·21 claims
- 3646US11075286B2Hybrid finfet structure with bulk source/drain regionsINTEL CORP·Filed 2016·Granted Jul 27, 2021·0 cites·21 claims
- 3744US10930729B2Fin-based thin film resistorINTEL CORP·Filed 2016·Granted Feb 23, 2021·0 cites·25 claims
- 3844US2021184045A1High voltage ultra-low power thick gate nanoribbon transistors for soc applicationsINTEL CORP·Filed 2019·Application pending·0 cites
- 3943US2021193844A1Strain based performance enhancement using selective metal oxidation inside gateINTEL CORP·Filed 2019·Application pending·0 cites
- 4037US11967615B2Dual threshold voltage (VT) channel devices and their methods of fabricationINTEL CORP·Filed 2015·Granted Apr 23, 2024·0 cites·10 claims
- 4137US11121040B2Multi voltage threshold transistors through process and design-induced multiple work functionsINTEL CORP·Filed 2016·Granted Sep 14, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →