Inventor · disambiguated record
Hsin-Lung Chao
Also filed as: CHAO HSIN-LUNG
5 granted patents·24 citations·filing 2013–2020
76Inventor score
Technology areasH10P
Files withTAIWAN SEMICONDUCTOR MFG CO LTD5
Top patents by PatentIndex Score
5 records- 0193US9515184B2Semiconductor arrangement with multiple-height fins and substrate trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 6, 2016·20 cites·20 claims
- 0284US10840143B2Methods for forming a semiconductor arrangement of fins having multiple heights and an alignment markTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·2 cites·20 claims
- 0382US9911658B2Methods for forming a semiconductor arrangement with multiple-height fins and substrate trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·2 cites·20 claims
- 0473US11469144B2Semiconductor arrangement with fin features having different heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 0561US10177036B2Semiconductor arrangement with fins having multiple heights and a dielectric layer recessed in the substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 8, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →