Inventor · disambiguated record
Hsiang-Lin Chen
Also filed as: CHEN HSIANG · CHEN HSIANG-LIN
20 granted patents·15 pending applications·273 citations·filing 2010–2025
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30TAIWAN SEMICONDUCTOR MFG2CHANG FENG-MING1CHEN JHUN HUA1LIN CHUNG-YI1
Top patents by PatentIndex Score
35 records- 0196US9099530B2Methods of patterning small via pitch dimensionsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 4, 2015·108 cites·20 claims
- 0295US12507490B2Semiconductor device including germanium region disposed in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·2 cites·20 claims
- 0394US12015099B2Semiconductor sensor and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·2 cites·20 claims
- 0494US11855237B2Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·2 cites·20 claims
- 0594US8728332B2Methods of patterning small via pitch dimensionsLIN CHUNG-YI·Filed 2012·Granted May 20, 2014·152 cites·19 claims
- 0688US12495632B2Semiconductor image sensor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 9, 2025·1 cites·20 claims
- 0786US11901393B2Image sensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·20 claims
- 0883US12166054B2Image sensor with passivation layer for dark current reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 0983US2025359357A1Image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1083US2025048763A1Image sensor with passivation layer for dark current reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1182US12363969B2Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1281US2025301736A1Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1380US2025318287A1Semiconductor device including germanium region disposed in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1479US12148853B2Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 1578US12096544B2Lithography thermal controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 1678US11908900B2Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 1778US2024387766A1Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1878US2024387587A1Semiconductor image sensor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1978US2024372028A1Method of manufacturing an optical sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2078US2024339555A1Semiconductor sensor and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2177US12261190B2Vertically stacked light sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 2276US2024389215A1Lithography thermal controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2376US2024145520A1Methods for fabricating image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2473US11848345B2Image sensor with passivation layer for dark current reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 2572US2025194269A1Vertically stacked light sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2670US8642451B2Active region patterning in double patterning processesCHANG FENG-MING·Filed 2010·Granted Feb 4, 2014·3 cites·20 claims
- 2769US12125934B2Method of manufacturing an optical sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·0 cites·20 claims
- 2869US11600737B2Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 2968US2023343885A1Image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3065US8580637B2Method of patterning a semiconductor device having improved spacing and shape control and a semiconductor deviceCHEN JHUN HUA·Filed 2011·Granted Nov 12, 2013·2 cites·20 claims
- 3162US11508817B2Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 3261US2025248139A1Enhanced channel structure for heterojunction semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3360US2025072135A1Image sensor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3458US2025015102A1Multiple wavelength band light sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3555US9070688B2Method of patterning a semiconductor device having improved spacing and shape control and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 30, 2015·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →