Inventor · disambiguated record
Hsia-Wei Chen
Also filed as: CHEN HSIA-WEI
94 granted patents·8 pending applications·471 citations·filing 2012–2025
99Inventor score
Top patents by PatentIndex Score
102 records- 0199US10008662B2Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·53 cites·18 claims
- 0299US9172036B2Top electrode blocking layer for RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 27, 2015·29 cites·20 claims
- 0398US9431604B2Resistive random access memory (RRAM) and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Aug 30, 2016·29 cites·20 claims
- 0498US9231197B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·23 cites·20 claims
- 0598US9023699B2Resistive random access memory (RRAM) structure and method of making the RRAM structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 5, 2015·21 cites·20 claims
- 0698US8963114B2One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 24, 2015·32 cites·11 claims
- 0797US9577009B1RRAM cell with PMOS access transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·29 cites·20 claims
- 0897US9543511B2RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·22 cites·20 claims
- 0997US9425392B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·13 cites·20 claims
- 1096US9099647B2One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·16 cites·20 claims
- 1195US11961545B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
- 1295US11545202B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·3 cites·20 claims
- 1394US11856801B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 1494US10566519B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·8 cites·20 claims
- 1594US10276485B2Method for forming a homogeneous bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·8 cites·20 claims
- 1694US10163981B2Metal landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·8 cites·20 claims
- 1793US12218005B2Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 4, 2025·1 cites·20 claims
- 1893US10176866B1Recap layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 8, 2019·15 cites·20 claims
- 1993US9537094B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·6 cites·20 claims
- 2093US8921818B2Resistance variable memory structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 30, 2014·10 cites·20 claims
- 2193US8742390B1Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 3, 2014·15 cites·20 claims
- 2292US9842986B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 12, 2017·8 cites·20 claims
- 2392US9780302B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 2492US9112148B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 18, 2015·6 cites·20 claims
- 2591US12310036B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 2691US9312482B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 12, 2016·9 cites·20 claims
- 2790US10038139B2One transistor and one resistive random access memory (RRAM) structure with spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·6 cites·20 claims
- 2890US9780145B2Resistive random access memory (RRAM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 2990US9466794B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 11, 2016·6 cites·20 claims
- 3090US9231205B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·6 cites·18 claims
- 3189US12424256B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 3289US11751485B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 3389US9478638B2Resistive switching random access memory with asymmetric source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 25, 2016·6 cites·20 claims
- 3489US9331277B2One transistor and one resistive random access memory (RRAM) structure with spacerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 3, 2016·6 cites·20 claims
- 3589US9076522B2Memory cells breakdown protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 7, 2015·12 cites·19 claims
- 3687US12232336B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 3787US9673391B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·5 cites·20 claims
- 3886US10510587B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·3 cites·20 claims
- 3986US9349953B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 24, 2016·6 cites·20 claims
- 4085US12075636B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 4185US11094744B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·2 cites·20 claims
- 4285US10903274B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 26, 2021·2 cites·20 claims
- 4385US10050197B2Resistance variable memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·4 cites·20 claims
- 4484US10636961B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 28, 2020·3 cites·20 claims
- 4583US12336442B2Memory device with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 4683US11037990B2Method to form memory cells separated by a void-free dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 15, 2021·1 cites·20 claims
- 4782US9444045B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·2 cites·20 claims
- 4882US9236570B2Resistive memory cell array with top electrode bit lineTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jan 12, 2016·3 cites·20 claims
- 4982US2025366380A1Rram with post-patterned treated memory films and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5081US10862029B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
Showing the top 50 of 102 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →