Inventor · disambiguated record
Hsun-Ying Huang
Also filed as: HUANG HSUN-YING
80 granted patents·11 pending applications·408 citations·filing 2009–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD81TAIWAN SEMICONDUCTOR MFG5LU SHOU SHU3CHEN CHENG-TSUNG1WENG WEI-CHIH1
Top patents by PatentIndex Score
91 records- 0199US11302738B2Image sensor with improved quantum efficiency surface structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·6 cites·17 claims
- 0299US10276619B2Semiconductor device structure with a conductive feature passing through a passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·220 cites·20 claims
- 0398US11855118B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0498US10566288B2Structure for standard logic performance improvement having a back-side through-substrate-viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 18, 2020·20 cites·20 claims
- 0597US11824073B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·20 claims
- 0697US11373971B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·5 cites·20 claims
- 0796US11784198B2Wide channel semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
- 0896US11756913B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·3 cites·20 claims
- 0996US11088188B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·4 cites·20 claims
- 1096US10790321B2CMOS image sensor having indented photodiode structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·6 cites·20 claims
- 1196US10147682B2Structure for stacked logic performance improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 4, 2018·13 cites·20 claims
- 1295US10566361B2Wide channel gate structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·8 cites·20 claims
- 1394US11706525B2Image sensor including light shielding layer and patterned dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·2 cites·20 claims
- 1494US11532662B2Method of forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·2 cites·20 claims
- 1594US11183523B2CMOS image sensor having indented photodiode structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·4 cites·20 claims
- 1694US11177309B2Image sensor with pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 16, 2021·3 cites·20 claims
- 1794US10177191B1Image sensor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 8, 2019·10 cites·20 claims
- 1893US12068271B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·1 cites·20 claims
- 1993US11107767B2Structure for standard logic performance improvement having a back-side through-substrate-viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·6 cites·20 claims
- 2093US10498947B2Image sensor including light shielding layer and patterned dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·6 cites·20 claims
- 2192US12010826B2Semiconductor device having a butted contact and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·1 cites·20 claims
- 2292US10692826B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·8 cites·20 claims
- 2392US10483310B2Isolation structure for reducing crosstalk between pixels and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·6 cites·20 claims
- 2491US11189657B2Image sensor with improved quantum efficiency surface structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·2 cites·20 claims
- 2591US10644060B2Image sensor with high quantum efficiency surface structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 5, 2020·6 cites·20 claims
- 2690US11189743B2Single photon avalanche diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·2 cites·19 claims
- 2790US2025344541A1Stacked substrate structure with inter-tier interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2889US10943942B2Image sensor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 9, 2021·2 cites·20 claims
- 2988US12356749B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 3088US2025301810A1Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3187US12218173B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 3287US9679939B1Backside illuminated image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·5 cites·20 claims
- 3386US10269844B2Structure and formation method of light sensing deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·3 cites·20 claims
- 3486US8772895B2Dark current reduction for back side illuminated image sensorLU SHOU-SHU·Filed 2011·Granted Jul 8, 2014·6 cites·18 claims
- 3585US11140309B2Image sensor including light shielding layer and patterned dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 5, 2021·2 cites·19 claims
- 3684US12457816B2Wide channel semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 28, 2025·0 cites·20 claims
- 3784US10535698B2Image sensor with pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·3 cites·20 claims
- 3884US8697472B2Image sensor with improved dark current performanceWENG WEI-CHIH·Filed 2011·Granted Apr 15, 2014·7 cites·18 claims
- 3983US11610901B2Semiconductor device having a butted contact, method of forming and method of usingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 21, 2023·1 cites·20 claims
- 4083US9812482B2Frontside illuminated (FSI) image sensor with a reflectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 7, 2017·4 cites·20 claims
- 4183US9142709B2Process for enhancing image quality of backside illuminated image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 22, 2015·5 cites·20 claims
- 4283US2025267959A1Image sensor with high quantum efficiency surface structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4382US12382744B2Stacked substrate structure with inter-tier interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 4482US10861859B2Memory cells with butted contacts and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·2 cites·20 claims
- 4582US2024371810A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4681US11456263B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·1 cites·20 claims
- 4781US2025338651A1Image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4880US10629765B2Single photon avalanche diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·2 cites·20 claims
- 4980US10157949B2Isolation structure for reducing crosstalk between pixels and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·2 cites·20 claims
- 5080US2024324162A1Semiconductor structure having a butted contact and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 91 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →