Inventor · disambiguated record
Hsuan-Ling Kao
Also filed as: KAO HSUAN-LING
9 granted patents·1 pending application·49 citations·filing 2002–2007
85Inventor score
Files withMACRONIX INT CO LTD9
Top patents by PatentIndex Score
10 records- 0176US7419868B2Gated diode nonvolatile memory processMACRONIX INT CO LTD·Filed 2007·Granted Sep 2, 2008·7 cites·28 claims
- 0271US6821841B1Method for fabricating a mask read-only-memory with diode cellsMACRONIX INT CO LTD·Filed 2003·Granted Nov 23, 2004·14 cites·20 claims
- 0369US7005696B2Structure of nonvolatile memory arrayMACRONIX INT CO LTD·Filed 2003·Granted Feb 28, 2006·12 cites·4 claims
- 0469US6979620B1Method for fabricating a flash memory cellMACRONIX INT CO LTD·Filed 2005·Granted Dec 27, 2005·5 cites·16 claims
- 0560US7151042B2Method of improving flash memory performanceMACRONIX INT CO LTD·Filed 2005·Granted Dec 19, 2006·2 cites·27 claims
- 0657US7768825B2Gated diode nonvolatile memory structure with diffusion barrier structureMACRONIX INT CO LTD·Filed 2007·Granted Aug 3, 2010·5 cites·23 claims
- 0755US7723757B2Vertical nonvolatile memory cell, array, and operationMACRONIX INT CO LTD·Filed 2007·Granted May 25, 2010·1 cites·26 claims
- 0855US7492638B2Gated diode nonvolatile memory operationMACRONIX INT CO LTD·Filed 2007·Granted Feb 17, 2009·3 cites·26 claims
- 0937US7244661B2Method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrateMACRONIX INT CO LTD·Filed 2005·Granted Jul 17, 2007·0 cites·11 claims
- 1031US2004079984A1Polysilicon self-aligned contact and a polysilicon common source line and method of forming the sameFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →