Inventor · disambiguated record
Hsiang Hsiang Ko
Also filed as: KO HSIANG H · KO HSIANG HSIANG
16 granted patents·2 pending applications·21 citations·filing 2006–2016
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG6TAIWAN SEMICONDUCTOR MFG CO LTD4HSIAO WEN CHU2LIAO MIAO-CHENG2CHONG LAI WAN1
Top patents by PatentIndex Score
18 records- 0182US8735255B2Method of manufacturing semiconductor deviceHSIAO WEN CHU·Filed 2012·Granted May 27, 2014·6 cites·20 claims
- 0278US9263275B2Interface for metal gate integrationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 16, 2016·6 cites·20 claims
- 0375US9064892B2Semiconductor devices utilizing partially doped stressor film portions and methods for forming the sameHSIAO WEN CHU·Filed 2011·Granted Jun 23, 2015·4 cites·16 claims
- 0472US9105578B2Interface for metal gate integrationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 11, 2015·3 cites·20 claims
- 0564US9634119B2Semiconductor devices utilizing partially doped stressor film portionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·1 cites·20 claims
- 0658US9214393B2Surface tension modification using silane with hydrophobic functional group for thin film depositionCHONG LAI WAN·Filed 2012·Granted Dec 15, 2015·1 cites·20 claims
- 0758US9006070B2Two-step shallow trench isolation (STI) processTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 14, 2015·0 cites·20 claims
- 0855US9735271B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·0 cites·20 claims
- 0955US9502280B2Two-step shallow trench isolation (STI) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·0 cites·20 claims
- 1055US9324863B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 26, 2016·0 cites·19 claims
- 1152US2007241459A1Devices having a cavity structure and related methodsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 1251US9698263B2Surface tension modification using silane with hydrophobic functional group for thin film depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 4, 2017·0 cites·18 claims
- 1351US9379275B2Apparatus and method for reducing dark current in image sensorsLIAO MIAO-CHENG·Filed 2012·Granted Jun 28, 2016·0 cites·20 claims
- 1451US8497183B2Devices having a cavity structure and related methodsCHOU YOU-HUA·Filed 2010·Granted Jul 30, 2013·0 cites·5 claims
- 1548US8692299B2Two-step shallow trench isolation (STI) processHong min hao·Filed 2012·Granted Apr 8, 2014·0 cites·20 claims
- 1644US8927406B2Dual damascene metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·0 cites·20 claims
- 1738US8455883B2Stressed semiconductor device and method of manufacturingLIAO MIAO-CHENG·Filed 2011·Granted Jun 4, 2013·0 cites·20 claims
- 1831US2014007905A1Wafer cleaning system and method using electrolytic gas for back-end purgeSUN CHUNG-REN·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →