Inventor · disambiguated record
Hsin-Yu Lai
Also filed as: LAI HSIN-YU
5 granted patents·14 pending applications·0 citations·filing 2010–2025
61Inventor score
Top patents by PatentIndex Score
19 records- 0177US2025351554A1High density capacitor and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0276US2025338551A1Tft with hydrogen absorption layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0375US2025336820A1Vertical back end of line transistor and integration with memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0474US2024387108A1Capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0573US2025279360A1Vertical back end of line transistor and integration with memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0671US2024387619A1Stacked capacitor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0769US2025203928A1Tft with hydrogen absorption layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0868US12238934B2Method of fabricating semiconductor device comprising ferroelectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 25, 2025·0 cites·20 claims
- 0966US12136517B2Capacitor structure and manufacturing method and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·0 cites·20 claims
- 1066US2025324608A1Method of fabricating semiconductor device comprising ferroelectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1166US2023011756A1High density capacitor and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1265US2025336524A1Method for assessing bacteremia and bacteremia assessing systemUNIV CHINA MEDICAL·Filed 2024·Application pending·0 cites
- 1361US12230670B2Stacked capacitor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 18, 2025·0 cites·20 claims
- 1461US11916127B2Multi-layer electrode to improve performance of ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 1560US2025374577A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1659US2025393253A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1756US2025351390A1Capacitor structure and method for fabricating the capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1856US2025373971A1Earphone device and identifying method of wearingCOMPAL ELECTRONICS INC·Filed 2024·Application pending·0 cites
- 1935US8759096B2Microfluidic chip and method using the sameWU CHEN-WEI·Filed 2010·Granted Jun 24, 2014·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →