Inventor · disambiguated record
Hsiao-Chun Lee
Also filed as: LEE HSIAO-CHUN
10 granted patents·2 pending applications·17 citations·filing 2012–2025
83Inventor score
Top patents by PatentIndex Score
12 records- 0191US9780089B2Bipolar junction transistor layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·8 cites·20 claims
- 0287US9842774B1Through substrate via structure for noise reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 12, 2017·7 cites·20 claims
- 0379US12356684B2Semiconductor structure having asymmetric source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 0479US2025301734A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0574US9484408B1Bipolar junction transistor layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 1, 2016·2 cites·20 claims
- 0666US11855145B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 0757US10020251B2Semiconductor device and method fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 10, 2018·0 cites·20 claims
- 0856US9406626B2Semiconductor device and method fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 2, 2016·0 cites·18 claims
- 0954US9768112B2Semiconductor device and method fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·0 cites·20 claims
- 1043US9705466B2Semiconductor device with guard ring coupled resonant circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·0 cites·20 claims
- 1143US8921978B2Dual DNW isolation structure for reducing RF noise on high voltage semiconductor devicesHUANG CHI-FENG·Filed 2012·Granted Dec 30, 2014·0 cites·19 claims
- 1241US2014252542A1Structure and Method for an Inductor With Metal Dummy FeaturesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →