Inventor · disambiguated record
Hsiao-Lun Lee
Also filed as: LEE HSIAO-LUN · LEE HSIAO-LUN BOB
5 granted patents·103 citations·filing 1996–2000
82Inventor score
Top patents by PatentIndex Score
5 records- 0185US6243298B1Non-volatile memory cell capable of being programmed and erased through substantially separate areas of one of its drain-side and source-side regionsAZALEA MICROELECTRONICS CORP·Filed 2000·Granted Jun 5, 2001·48 cites·39 claims
- 0263US5620913AMethod of making a flash memory cellCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Apr 15, 1997·22 cites·16 claims
- 0351US5825684ASram cell structureCHARTERED SEMICONDUCTOR MFG·Filed 1997·Granted Oct 20, 1998·17 cites·15 claims
- 0449US5744834AFlash memory cell with tunnel oxide layer protected from thermal cyclingCHARTERED SEMICONDUCTOR MFG·Filed 1997·Granted Apr 28, 1998·12 cites·20 claims
- 0532US5700707AMethod of manufacturing SRAM cell structure having a tunnel oxide capacitorCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Dec 23, 1997·4 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →