Inventor · disambiguated record
Hsing-Jui Lee
Also filed as: LEE HSING-JUI
9 granted patents·2 pending applications·56 citations·filing 2002–2016
84Inventor score
Top patents by PatentIndex Score
11 records- 0185US8222132B2Fabricating high-K/metal gate devices in a gate last processLEE DA-YUAN·Filed 2009·Granted Jul 17, 2012·12 cites·20 claims
- 0285US6849131B2Truncated dummy plate for process furnaceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 1, 2005·36 cites·8 claims
- 0378US9512519B2Atomic layer deposition apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Dec 6, 2016·4 cites·18 claims
- 0477US9209243B2Method of forming a shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Dec 8, 2015·3 cites·21 claims
- 0560US8975155B2Method of forming a shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 10, 2015·1 cites·20 claims
- 0651US9343312B2High temperature intermittent ion implantationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 17, 2016·0 cites·20 claims
- 0749US10858736B2Atomic layer deposition methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 8, 2020·0 cites·19 claims
- 0848US10049856B2High temperature intermittent ion implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·0 cites·20 claims
- 0944US2005124169A1Truncated dummy plate for process furnaceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 1036US6605812B1Method reducing the effects of N2 gas contamination in an ion implanterTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 12, 2003·0 cites·20 claims
- 1132US2014038421A1Deposition Chamber and InjectorKUO KAI-LUN·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →