Inventor · disambiguated record
Hsien-Ming Lee
Also filed as: LEE HSIEN MING · LEE HSIEN-MING LEE
71 granted patents·24 pending applications·183 citations·filing 2002–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD57TAIWAN SEMICONDUCTOR MFG14LEE HSIEN MING5ACADEMIA SINICA4TA LIANG TECH CO LTD4
Top patents by PatentIndex Score
95 records- 0195US10535523B1Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·12 cites·20 claims
- 0295US7193327B2Barrier structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 20, 2007·43 cites·17 claims
- 0394US12255104B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·1 cites·20 claims
- 0494US11710638B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·2 cites·20 claims
- 0593US11024505B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 1, 2021·7 cites·20 claims
- 0693US10854459B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 1, 2020·7 cites·20 claims
- 0791US11610982B2Void elimination for gap-filling in high-aspect ratio trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·2 cites·20 claims
- 0891US11075124B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 27, 2021·2 cites·20 claims
- 0989US11282938B2Capping layers in metal gates of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 22, 2022·5 cites·20 claims
- 1088US9590065B2Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 7, 2017·6 cites·20 claims
- 1187US11532509B2Selective hybrid capping layer for metal gates of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 1287US2025308907A1Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1386US12142530B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 12, 2024·1 cites·20 claims
- 1486US11545363B2Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·1 cites·20 claims
- 1586US9064857B2N metal for FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 23, 2015·6 cites·20 claims
- 1685US11538805B2Method of tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 27, 2022·1 cites·20 claims
- 1785US10626899B2Clamping fixtureABILITY ENTPR CO LTD·Filed 2018·Granted Apr 21, 2020·8 cites·19 claims
- 1885US9581180B2Clamper and device using the sameABILITY ENTPR CO LTD·Filed 2015·Granted Feb 28, 2017·7 cites·20 claims
- 1985US2024363350A1Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2084US12176251B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 2183US11302818B2Gate resistance reduction through low-resistivity conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 12, 2022·2 cites·20 claims
- 2283US10804161B2CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 13, 2020·3 cites·20 claims
- 2382US12354876B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2482US12294022B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 2582US12237228B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 2682US12170202B2Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 2781US2025241048A1Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2880US10644153B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 5, 2020·3 cites·20 claims
- 2980US2025301755A1Capping layers in metal gates of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3079US2024387276A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3178US12100751B2Void elimination for gap-filling in high-aspect ratio trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 3278US11266603B2Synthetic polypeptides and uses thereofACADEMIA SINICA·Filed 2019·Granted Mar 8, 2022·2 cites·7 claims
- 3378US8272884B2Signal transmission deviceLIN YU-FANG·Filed 2011·Granted Sep 25, 2012·8 cites·20 claims
- 3478US2025185344A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3577US12040235B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 3677US9293334B2N metal for FinFET and methods of formingTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 22, 2016·2 cites·20 claims
- 3777US2024371981A1Void elimination for gap-filling in high-aspect ratio trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3877US2024363627A1Method of tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3977US2025343043A1Metal gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4076US2024162349A1Gate resistance reduction through low-resistivity conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4175US12087767B2Method of tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 4275US11804409B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 4375US10699966B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·1 cites·20 claims
- 4475US9123746B2FinFETs with multiple threshold voltagesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 1, 2015·2 cites·20 claims
- 4575US2024387257A1Selective hybrid capping layer for metal gates of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4674US11961768B2CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 16, 2024·0 cites·18 claims
- 4774US11735481B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 4874US11721740B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 4973US11916146B2Gate resistance reduction through low-resistivity conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 5072US12376361B2Capping layers in metal gates of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →