Inventor · disambiguated record
Hsin-Yi Lee
Also filed as: LEE HSIN-YI
105 granted patents·50 pending applications·162 citations·filing 1999–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD136ASUSTEK COMP INC3HEWLETT PACKARD DEVELOPMENT CO2LEE HSIN-YI2RALINK TECHNOLOGY CORP2
Top patents by PatentIndex Score
155 records- 0199US11437474B2Gate structures in transistors and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·6 cites·20 claims
- 0298US11916114B2Gate structures in transistors and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·4 cites·19 claims
- 0398US11637180B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·5 cites·20 claims
- 0498US11502081B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 15, 2022·4 cites·20 claims
- 0598US11443979B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·4 cites·20 claims
- 0698US11411079B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·4 cites·20 claims
- 0798US11302793B2Transistor gates and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·6 cites·20 claims
- 0898US11227931B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·4 cites·20 claims
- 0997US11923414B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 1097US11742395B2Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·4 cites·19 claims
- 1197US11437240B2Transistor gate structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·3 cites·20 claims
- 1296US11967504B2Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·4 cites·20 claims
- 1396US11935754B2Transistor gate structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
- 1496US11935937B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
- 1596US11923240B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 1696US11916124B2Transistor gates and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·19 claims
- 1795US12166095B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·1 cites·20 claims
- 1894US12009391B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·2 cites·20 claims
- 1994US11810948B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·2 cites·20 claims
- 2094US11810961B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·2 cites·20 claims
- 2194US11688786B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·2 cites·20 claims
- 2294US11444198B2Work function control in gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
- 2394US11289578B2Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·8 cites·20 claims
- 2493US11715762B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·2 cites·20 claims
- 2593US11699740B2Electroless plating method for metal gate fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·2 cites·20 claims
- 2693US9978601B2Methods for pre-deposition treatment of a work-function metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 22, 2018·8 cites·20 claims
- 2793US9799745B2Atomic layer deposition methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·8 cites·20 claims
- 2892US12132112B2Work function control in gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·1 cites·20 claims
- 2992US11488873B2Metal gates and methods of forming therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 3092US2025359318A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3191US11404554B2Transistor gates and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
- 3290US10923576B2Atomic layer deposition methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 16, 2021·2 cites·20 claims
- 3390US9972694B2Atomic layer deposition methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 15, 2018·5 cites·20 claims
- 3489US11121041B2Methods for threshold voltage tuning and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·4 cites·20 claims
- 3589US10510621B2Methods for threshold voltage tuning and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 3689US9837507B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·5 cites·16 claims
- 3787US2025357129A1Fluorine incorporation method for nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3886US12464817B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 3986US12283609B2Gate structure of transistor including a plurality of work function layers and oxygen device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 4086US2025351481A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4185US12334390B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 4285US12283613B2Gate structures in transistors and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 4385US2025294809A1Transistor gates and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4484US12426324B2Gates structures of nanostructure field-effect transistors (nano-FETs) including a plurality of semiconductor based capping materials and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 4584US12417920B2Transistor gate structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 4684US12349410B2Nanostructure field-effect transistor (NANO-FET) with gates including a seam in p-type work function metal between nanostructures and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 4784US11688797B2Semiconductor device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
- 4883US12513957B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·0 cites·20 claims
- 4983US12513961B2Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
- 5083US12451359B2Fluorine incorporation method for nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
Showing the top 50 of 155 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →