Inventor · disambiguated record
Hsien-Feng Liao
Also filed as: LIAO HSIEN-FENG
8 granted patents·4 pending applications·5 citations·filing 2018–2024
74Inventor score
Files withVANGUARD INT SEMICONDUCT CORP12
Top patents by PatentIndex Score
12 records- 0194US11569657B1Protection circuitsVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted Jan 31, 2023·3 cites·20 claims
- 0274US11088541B2Integrated circuit and electrostatic discharge protection circuit thereofVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Aug 10, 2021·2 cites·15 claims
- 0371US12444935B2Electrostatic discharge protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2023·Granted Oct 14, 2025·0 cites·12 claims
- 0459US2025331309A1Esd protection circuit and structureVANGUARD INT SEMICONDUCT CORP·Filed 2024·Application pending·0 cites
- 0558US11811222B2Electrostatic discharge protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted Nov 7, 2023·0 cites·18 claims
- 0658US2025212448A1Electrostatic discharge protection deviceVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 0757US2025309639A1Electrostatic discharge protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2024·Application pending·0 cites
- 0856US2025098244A1Electrostatic discharge (esd) protection device and transistor structureVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 0955US12342629B2Electrostatic discharge protection deviceVANGUARD INT SEMICONDUCT CORP·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 1055US11545481B2Electrostatic discharge protection devicesVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Jan 3, 2023·0 cites·18 claims
- 1152US12419115B2Electrostatic discharge protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2022·Granted Sep 16, 2025·0 cites·15 claims
- 1247US12501717B2Semiconductor structure with a gate and a shielding structureVANGUARD INT SEMICONDUCT CORP·Filed 2022·Granted Dec 16, 2025·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →