Inventor · disambiguated record
Hsiang-Ju Liao
Also filed as: LIAO HSIANG-JU
2 granted patents·3 pending applications·0 citations·filing 2022–2025
29Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD5
Top patents by PatentIndex Score
5 records- 0184US2025366118A1Semiconductor gate and contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0278US2025366056A1Semiconductor device structure with metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0375US2024387644A1Semiconductor gate and contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0471US12484274B2Techniques for semiconductor gate and contact formation to reduce seam formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 0567US12464773B2Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →