Inventor · disambiguated record
Hsiang-Wei Lin
Also filed as: LIN HSIANG-WEI
30 granted patents·2 pending applications·45 citations·filing 2012–2024
95Inventor score
Top patents by PatentIndex Score
32 records- 0191US9728447B2Multi-barrier deposition for air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·7 cites·20 claims
- 0290US9607882B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·7 cites·23 claims
- 0389US10304677B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·5 cites·20 claims
- 0488US10629534B2Interconnection structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·4 cites·20 claims
- 0582US11011414B2Multi-barrier deposition for air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·2 cites·20 claims
- 0681US10483161B2Multi-barrier deposition for air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·2 cites·20 claims
- 0780US10157779B2Multi-barrier deposition for air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·2 cites·20 claims
- 0880US9425091B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·2 cites·20 claims
- 0980US9385037B2Semiconductor arrangement comprising metal cap and dielectric layer defining air gapTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 5, 2016·4 cites·20 claims
- 1079US12506001B2Low-K feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 1178US9543125B2Directing plasma distribution in plasma-enhanced chemical vapor depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 10, 2017·4 cites·20 claims
- 1275US11705327B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 18, 2023·0 cites·20 claims
- 1374US9741575B2CVD apparatus with gas delivery ringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 22, 2017·3 cites·20 claims
- 1474US2024387332A1Conductive Features with Air Spacer and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1572US10403563B2Semiconductor structure and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 3, 2019·1 cites·20 claims
- 1671US11295948B2Low-K feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 5, 2022·0 cites·20 claims
- 1768US10943868B2Structure for interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 9, 2021·0 cites·16 claims
- 1867US12249559B2Conductive features with air spacer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 1967US9831120B2Semiconductor arrangement and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·1 cites·20 claims
- 2067US9613852B2Semiconductor structure and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 4, 2017·1 cites·20 claims
- 2164US10879369B2FinFET device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
- 2264US10658270B2Semiconductor structure and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·0 cites·20 claims
- 2360US10964626B2Semiconductor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·0 cites·20 claims
- 2458US10720507B2FinFET device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·0 cites·20 claims
- 2557US10685908B2Semiconductor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 16, 2020·0 cites·20 claims
- 2657US10109522B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·0 cites·20 claims
- 2756US10950431B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·0 cites·19 claims
- 2855US9082770B2Damascene gap structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 14, 2015·0 cites·20 claims
- 2954US9887128B2Method and structure for interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·0 cites·20 claims
- 3054US2014272135A1Deposition injection maskingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
- 3153US12334395B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·20 claims
- 3252US10516035B2Semiconductor device structure with a low-k spacer layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →