Inventor · disambiguated record
Hsin Fu Lin
Also filed as: LIN HSIN · LIN HSIN FU
20 granted patents·15 pending applications·137 citations·filing 2000–2025
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD28MACRONIX INT CO LTD3ACADEMIA SINICA1PEACE SHIP INTERNAT ENTPR CO L1
Top patents by PatentIndex Score
35 records- 0194US12136627B23DIC structure for high voltage device on a SOI substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 5, 2024·2 cites·20 claims
- 0294US11978740B2Semiconductor-on-insulator (SOI) semiconductor structures including a high-k dielectric layer and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·2 cites·20 claims
- 0392US12414380B2Method for forming an integrated chip (IC) including forming a through substrate via (TSV) in an isolation structure formed in a first opening that formed in a metal substrate layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 9, 2025·1 cites·20 claims
- 0492US6336616B1Movable projection screen hanger with steadfast clipsPEACE SHIP INTERNAT ENTPR CO L·Filed 2000·Granted Jan 8, 2002·83 cites·1 claims
- 0586US12408439B2Integrated chip (IC) having conductive TSV extended through SOI substrate comprising a semiconductor device layer, an insulating layer and a metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 2, 2025·1 cites·20 claims
- 0686US2025359337A1A low-cost semiconductor-on-insulator (soi) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0783US2025338570A1High voltage device with boosted breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0878US6876493B1Electric projection screen roller and balance rod assemblyFiled 2004·Granted Apr 5, 2005·45 cites·2 claims
- 0975US12218189B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1075US2024250116A1High voltage device with boosted breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1175US2024371884A13dic structure for high voltage device on a soi substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1274US2025343115A1Semiconductor device including insulating structure surrounding through via and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1373US11935918B2High voltage device with boosted breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 1473US2024250089A1Semiconductor-on-insulator (soi) semiconductor structures including a high-k dielectric layer and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1573US2025366159A1Stepped isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1672US2024347630A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1772US2025311445A1Diode with reduced current leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1872US2024379486A1Integrated chip with good thermal dissipation performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1969US2023387209A1Integration of low and high voltage devices on substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2067US12300566B2Integrated chip with good thermal dissipation performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 2165US11862670B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 2265US7354824B2Fabrication method of non-volatile memoryMACRONIX INT CO LTD·Filed 2006·Granted Apr 8, 2008·2 cites·12 claims
- 2364US12471356B2Stepped isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 2464US12439663B2Integration of low and high voltage devices on substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 2564US2024096753A1Semiconductor device including insulating structure surrounding through via and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2663US12364020B2Diode with reduced current leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 2762US11961890B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·0 cites·20 claims
- 2860US12051748B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 2959US7307296B2Flash memory and fabrication method thereofMACRONIX INT CO LTD·Filed 2005·Granted Dec 11, 2007·1 cites·7 claims
- 3056US2025194132A1Semiconductor device having split gates and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3154US11532701B2Semiconductor isolation structure and method for making the semiconductor isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 3253US2024274716A1Field effect transistor for reducing hot carrier damage and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3350US10971677B2Electrically controlled nanomagnet and spin orbit torque magnetic random access memory including the sameACADEMIA SINICA·Filed 2019·Granted Apr 6, 2021·0 cites·20 claims
- 3440US10217754B2Semiconductor device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2014·Granted Feb 26, 2019·0 cites·7 claims
- 3536US2005150994A1Electric projection screen roller structureFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →