Inventor · disambiguated record

Hsing-Lien Lin

Also filed as: LIN HSING-LIEN

111 granted patents·18 pending applications·444 citations·filing 1999–2025

99Inventor score

Technology areasH10N H10P H01L H10D H10W

Files withTAIWAN SEMICONDUCTOR MFG CO LTD122 TAIWAN SEMICONDUCTOR MFG4 CHANG YAO-WEN1 VANGUARD INT SEMICONDUCT CORP1 WU CHIH-TA1

Top patents by PatentIndex Score

129 records

0199US10164182B1Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·36 cites·20 claims
0298US9954166B1Embedded memory device with a composite top electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 24, 2018·29 cites·20 claims
0397US11018297B2Memory device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·3 cites·20 claims
0496US11844226B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
0596US11758830B2Memory device structure with protective elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·2 cites·20 claims
0696US11362271B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·3 cites·20 claims
0796US9431609B2Oxide film scheme for RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·30 cites·20 claims
0896US9257642B1Protective sidewall techniques for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·18 cites·19 claims
0995US11430951B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
1094US11887929B2Techniques to inhibit delamination from flowable gap-fill dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
1194US10910560B2RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 2, 2021·6 cites·20 claims
1294US9647207B2Resistive random access memory (RRAM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·11 cites·20 claims
1394US9577191B2RRAM cell bottom electrode formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·11 cites·20 claims
1494US2025366381A1Memory device structure with data storage elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1593US11152568B2Top-electrode barrier layer for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·3 cites·20 claims
1693US10505107B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
1793US10176866B1Recap layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 8, 2019·15 cites·20 claims
1893US9847401B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 19, 2017·14 cites·17 claims
1992US10818857B2Organic photosensitive device with an electron-blocking and hole-transport layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 27, 2020·4 cites·20 claims
2092US10811600B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 20, 2020·4 cites·20 claims
2192US10804464B2Method of forming memory device with diffusion barrier and capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 13, 2020·3 cites·20 claims
2292US9978938B2Resistive RAM structure and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·9 cites·20 claims
2392US9627613B2Resistive random access memory (RRAM) cell with a composite capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·9 cites·17 claims
2491US11495532B2Techniques to inhibit delamination from flowable gap-fill dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·2 cites·20 claims
2591US11152455B2Method to reduce breakdown failure in a MIM capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·4 cites·20 claims
2691US10193065B2High K scheme to improve retention performance of resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 29, 2019·9 cites·20 claims
2791US9828234B2Semiconductor MEMS structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·4 cites·20 claims
2890US11594593B2Method to reduce breakdown failure in a MIM capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·1 cites·20 claims
2990US10273142B2Semiconductor MEMS structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·3 cites·20 claims
3090US9825117B2MIM/RRAM structure with improved capacitance and reduced leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·5 cites·20 claims
3190US2025344418A1Method to reduce breakdown failure in a mim capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3288US12364171B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
3388US10164003B2MIM capacitor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
3488US9876184B2Organic photosensitive device with an electron-blocking and hole-transport layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 23, 2018·5 cites·20 claims
3588US9484537B2Organic photo diode with dual electron blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 1, 2016·6 cites·19 claims
3688US2025311646A1Rram structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3787US12414484B2RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
3887US12408567B2Memory device structure with data storage elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
3987US12221337B2Semiconductor MEMS structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
4087US12069971B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
4187US10622555B2Film scheme to improve peeling in chalcogenide based PCRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 14, 2020·6 cites·20 claims
4287US2025365979A1Ferroelectric random access memory device with seed layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4386US12507601B2Thermal dispersion layer in programmable metallization cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
4486US12137572B2Ferroelectric memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·1 cites·20 claims
4586US11767216B2Semiconductor MEMS structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 26, 2023·1 cites·20 claims
4686US11527717B2Resistive memory cell having a low forming voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
4786US9960353B2Method of fabricating an organic photodiode with dual electron blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 1, 2018·4 cites·18 claims
4886US9450183B2Memory structure having top electrode with protrusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·5 cites·20 claims
4986US2024373763A1Top-electrode barrier layer for rramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
5085US12114582B2Top-electrode barrier layer for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims

Showing the top 50 of 129 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →