Inventor · disambiguated record
Hsueh-Hsing Liu
Also filed as: LIU HSUEH-HSING
10 granted patents·2 pending applications·16 citations·filing 2008–2023
82Inventor score
Top patents by PatentIndex Score
12 records- 0182US10074533B1Structure of epitaxial wafer and method of fabricating the sameIND TECH RES INST·Filed 2017·Granted Sep 11, 2018·4 cites·7 claims
- 0278US8679881B1Growth method for reducing defect density of gallium nitrideTEKCORE CO LTD·Filed 2013·Granted Mar 25, 2014·6 cites·10 claims
- 0371US9970880B2Apparatus for measuring a curvature of a thin film and the method thereofIND TECH RES INST·Filed 2016·Granted May 15, 2018·2 cites·23 claims
- 0463US8524583B2Method for growing semipolar nitrideCHYI JEN-INN·Filed 2011·Granted Sep 3, 2013·2 cites·10 claims
- 0561US8048786B2Method for fabricating single-crystalline substrate containing gallium nitrideUNIV NAT CENTRAL·Filed 2008·Granted Nov 1, 2011·1 cites·9 claims
- 0658US11742394B2Semiconductor substrate and transistorIND TECH RES INST·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 0755US10957814B2Ultraviolet C light-emitting diode having electron blocking layersIND TECH RES INST·Filed 2019·Granted Mar 23, 2021·0 cites·20 claims
- 0855US8586995B2Semiconductor element having high breakdown voltageCHYI JEN-INN·Filed 2012·Granted Nov 19, 2013·1 cites·12 claims
- 0955US2024258370A1Semiconductor componentIND TECH RES INST·Filed 2023·Application pending·0 cites
- 1054US11233173B2Ultraviolet c light-emitting diodeIND TECH RES INST·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 1147US2011045658A1Method for fabricating a semi-polar nitride semiconductorLIU HSUEH-HSING·Filed 2009·Application pending·0 cites
- 1237US8237174B2LED structureCHEN PENG-REN·Filed 2010·Granted Aug 7, 2012·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →