Inventor · disambiguated record
Hsien-Yu Pan
Also filed as: PAN HSIEN-YU
32 granted patents·4 pending applications·53 citations·filing 2006–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD31CHAN WEI MIN1CHEN YEN-HUEI1INTELLECTUAL PROPERTY LIBARARY1PAN HSIEN-YU1
Top patents by PatentIndex Score
36 records- 0197US12029023B2Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·2 cites·20 claims
- 0295US11657870B2Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
- 0395US11637108B2Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·2 cites·20 claims
- 0493US11074966B2Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·6 cites·20 claims
- 0590US11018142B2Memory cell and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·4 cites·20 claims
- 0690US9886996B2SRAM cell for interleaved wordline schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·8 cites·20 claims
- 0790US2025331147A1Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0888US12408316B2Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 0986US10734066B2Static random access memory with write assist circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 4, 2020·6 cites·20 claims
- 1083US2025054537A1Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1181US8570823B2Sense amplifier with low sensing margin and high device variation toleranceCHEN YEN-HUEI·Filed 2010·Granted Oct 29, 2013·8 cites·22 claims
- 1280US12100436B2Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 1376US8576655B2Semiconductor memoriesCHAN WEI MIN·Filed 2011·Granted Nov 5, 2013·6 cites·20 claims
- 1475US10770131B2SRAM cell for interleaved wordline schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·2 cites·20 claims
- 1574US10714181B2Memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 14, 2020·1 cites·18 claims
- 1673US10276579B2Layout design for manufacturing a memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·2 cites·20 claims
- 1770US11176997B2Memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 16, 2021·0 cites·20 claims
- 1868US10971217B2SRAM cell for interleaved wordline schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 6, 2021·0 cites·20 claims
- 1968US10964389B2Memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 30, 2021·0 cites·20 claims
- 2066US12074156B2Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 2166US10276231B2SRAM cell for interleaved wordline schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·1 cites·20 claims
- 2264US11948627B2Static random access memory with write assist circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 2364US11769533B2Semiconductor chip having memory and logic cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·0 cites·20 claims
- 2463US2024363616A1Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2562US10943667B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·1 cites·20 claims
- 2661US11423977B2Static random access memory with write assist circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·21 claims
- 2758US11062739B2Semiconductor chip having memory and logic cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·12 claims
- 2855US10964683B2Memory array circuit and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·0 cites·20 claims
- 2954US11322198B2Multi word line assertionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·0 cites·20 claims
- 3050US8077517B2Distributed VDC for SRAM memoryWANG LI-WEN·Filed 2008·Granted Dec 13, 2011·2 cites·10 claims
- 3149US9853035B2Layout scheme and method for forming device cells in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 26, 2017·0 cites·18 claims
- 3247US10892008B2Multi word line assertionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 12, 2021·0 cites·19 claims
- 3345US10510739B2Method of providing layout design of SRAM cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·21 claims
- 3443US10832765B2Variation tolerant read assist circuit for SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·0 cites·21 claims
- 3541US8928113B2Layout scheme and method for forming device cells in semiconductor devicesPAN HSIEN-YU·Filed 2011·Granted Jan 6, 2015·0 cites·5 claims
- 3634US2007133275A1Low-power reading reference circuit for split-gate flash memoryINTELLECTUAL PROPERTY LIBARARY·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →