Inventor · disambiguated record
Hsiang-Ku Shen
Also filed as: SHEN HSIANG-KU
70 granted patents·58 pending applications·106 citations·filing 2011–2025
98Inventor score
Top patents by PatentIndex Score
128 records- 0198US12230566B2Metal-insulator-metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·3 cites·20 claims
- 0298US11114373B1Metal-insulator-metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 7, 2021·9 cites·20 claims
- 0398US9633999B1Method and structure for semiconductor mid-end-of-line (MEOL) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·32 cites·20 claims
- 0497US11950432B2Semiconductor packages and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·3 cites·20 claims
- 0596US11842959B2Metal-Insulator-Metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·2 cites·20 claims
- 0696US11443984B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
- 0796US11424319B2Multilayer capacitor electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·3 cites·20 claims
- 0896US10163704B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·14 cites·22 claims
- 0995US11728262B2Metal plate corner structure on metal insulator metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·3 cites·20 claims
- 1094US12191248B2Semiconductor arrangement and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·2 cites·20 claims
- 1194US10163887B2Method and structure for semiconductor mid-end-of-line (MEOL) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·7 cites·20 claims
- 1292US11961880B2Metal-insulator-metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·20 claims
- 1392US11342408B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 1491US11716910B2MRAM structure for balanced loadingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 1, 2023·2 cites·20 claims
- 1591US11521970B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
- 1686US12477756B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 1786US2025301663A1Semiconductor devices and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1885US2025336428A1Structure and Method for MRAM Devices with a Slot ViaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1984US12432933B2Semiconductor packagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 2084US11715756B2Device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·1 cites·20 claims
- 2184US11688759B2Metal-insulator-metal capacitive structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
- 2284US11145592B2Process for forming metal-insulator-metal structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·2 cites·20 claims
- 2384US10734474B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·2 cites·19 claims
- 2484US2025338506A1Semiconductor packagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2583US12201031B2Structure and method for MRAM devices having spacer elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 2683US11996356B2Low-stress passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
- 2783US9947646B2Method and structure for semiconductor mid-end-of-line (MEOL) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 17, 2018·2 cites·20 claims
- 2883US2024312885A1Low-stress passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2983US2024389358A1Method of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3082US12356633B2Semiconductor devices and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 3182US12193336B2Structure and method for integrating MRAM and logic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 3282US9893062B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·3 cites·20 claims
- 3381US12243909B2Multilayer capacitor electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 3481US2025359091A1Metal-Insulator-Metal Capacitors And Methods Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3580US12444674B2Back-end-of-line passive device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 3680US11532695B2Stress reduction structure for metal-insulator-metal capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·1 cites·20 claims
- 3780US2025357312A1Metal-insulator-metal (mim) capacitors with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3879US12300640B2Semiconductor device and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 3979US12211845B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 4079US11923405B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 4179US11031325B2Low-stress passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·1 cites·20 claims
- 4279US10515945B2Method and structure for semiconductor mid-end-of-year (MEOL) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·1 cites·20 claims
- 4379US2025357202A1Semiconductor package redistribution structure and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4479US2025192026A1Metal-Insulator-Metal StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4579US2024386932A1Structure and Method for MRAM Devices with a Slot ViaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4678US12107041B2Metal plate corner structure on metal insulator metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 4778US12080753B2Device structure with a redistribution layer and a buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 4878US2024379531A1Back-end-of-line passive device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4978US2025357372A1IC Structure with Stress-Release Pattern to Enhance Package YieldTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5078US2025349703A1Dummy Metal-Insulator-Metal Structures Within ViasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 128 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →