Inventor · disambiguated record
Hsueh-Chang Sung
Also filed as: SUNG HSUEH-CHANG
99 granted patents·18 pending applications·607 citations·filing 2007–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD91TAIWAN SEMICONDUCTOR MFG15SU CHIEN CHANG3KWOK TSZ-MEI2CHEN KUAN-YU1
Top patents by PatentIndex Score
117 records- 0199US8362575B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·242 cites·18 claims
- 0297US11211473B2Epitaxial fin structures having an epitaxial buffer region and an epitaxial capping regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·3 cites·20 claims
- 0397US8263451B2Epitaxy profile engineering for FinFETsSU CHIEN-CHANG·Filed 2010·Granted Sep 11, 2012·83 cites·20 claims
- 0496US10707328B2Method of forming epitaxial fin structures of finFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 7, 2020·10 cites·20 claims
- 0595US9793404B2Silicon germanium p-channel FinFET stressor structure and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 17, 2017·13 cites·20 claims
- 0695US8975144B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 10, 2015·18 cites·20 claims
- 0794US12074071B2Source/drain structures and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·1 cites·20 claims
- 0894US11677027B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·2 cites·20 claims
- 0994US10483396B1Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·10 cites·20 claims
- 1094US9287398B2Transistor strain-inducing schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 15, 2016·12 cites·20 claims
- 1193US11948840B2Protective layer over FinFET and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·2 cites·20 claims
- 1293US10026662B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 17, 2018·9 cites·20 claims
- 1393US9515187B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·9 cites·20 claims
- 1492US11804408B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·1 cites·20 claims
- 1592US9691898B2Germanium profile for channel strainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 27, 2017·9 cites·20 claims
- 1692US8796788B2Semiconductor devices with strained source/drain structuresKWOK TSZ-MEI·Filed 2011·Granted Aug 5, 2014·14 cites·7 claims
- 1791US11888046B2Epitaxial fin structures of finFET having an epitaxial buffer region and an epitaxial capping regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 30, 2024·1 cites·20 claims
- 1891US10734520B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
- 1991US9601619B2MOS devices with non-uniform P-type impurity profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 21, 2017·8 cites·20 claims
- 2090US11063152B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·4 cites·20 claims
- 2190US10879355B2Profile design for improved device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·5 cites·20 claims
- 2290US9953836B2Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·5 cites·19 claims
- 2390US8846461B2Silicon layer for stopping dislocation propagationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 30, 2014·8 cites·17 claims
- 2490US8344447B2Silicon layer for stopping dislocation propagationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jan 1, 2013·13 cites·11 claims
- 2589US9666691B2Epitaxy profile engineering for FinFETsSU CHIEN-CHANG·Filed 2012·Granted May 30, 2017·9 cites·17 claims
- 2688US10084089B2Source and drain stressors with recessed top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·3 cites·20 claims
- 2788US9583483B2Source and drain stressors with recessed top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 28, 2017·5 cites·18 claims
- 2888US9337337B2MOS device having source and drain regions with embedded germanium-containing diffusion barrierTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 10, 2016·7 cites·19 claims
- 2988US9209175B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 3086US10062781B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·2 cites·20 claims
- 3186US9768302B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·4 cites·20 claims
- 3286US8558289B2Transistors having a composite strain structure, integrated circuits, and fabrication methods thereofCHENG CHUN-FAI·Filed 2010·Granted Oct 15, 2013·8 cites·21 claims
- 3385US11600534B2Source/drain structures and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·1 cites·20 claims
- 3485US11133416B2Methods of forming semiconductor devices having plural epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·3 cites·20 claims
- 3585US8709897B2High performance strained source-drain structure and method of fabricating the sameSUNG HSUEH-CHANG·Filed 2010·Granted Apr 29, 2014·9 cites·20 claims
- 3685US8680625B2Facet-free semiconductor deviceFAN WEI-HAN·Filed 2010·Granted Mar 25, 2014·12 cites·20 claims
- 3784US11075120B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·2 cites·20 claims
- 3884US9666686B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·2 cites·20 claims
- 3984US8835982B2Method of manufacturing strained source/drain structuresKWOK TSZ-MEI·Filed 2011·Granted Sep 16, 2014·8 cites·20 claims
- 4084US2024363753A1Epitaxial Source/Drain Structure and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4183US11348840B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·1 cites·20 claims
- 4283US8815713B2Reducing pattern loading effect in epitaxyTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 26, 2014·5 cites·18 claims
- 4383US2025254970A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4482US12310091B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 4582US12062720B2Epitaxial source/drain structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 4682US9117905B2Method for incorporating impurity element in EPI silicon processSU CHIEN-CHANG·Filed 2009·Granted Aug 25, 2015·7 cites·20 claims
- 4782US8487354B2Method for improving selectivity of epi processCHEN KUAN-YU·Filed 2009·Granted Jul 16, 2013·6 cites·20 claims
- 4882US2024387731A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4981US12218240B2Source/drain regions of FinFET devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 5081US2025359104A1Semiconductor Device Having FIN Structure and Method of Forming ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 117 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →