Inventor · disambiguated record
Hsi-Wen Tien
Also filed as: TIEN HSI-WEN
76 granted patents·32 pending applications·95 citations·filing 2012–2025
98Inventor score
Top patents by PatentIndex Score
108 records- 0197US11302641B2Self-aligned cavity strucutreTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·4 cites·20 claims
- 0297US11171284B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 9, 2021·4 cites·20 claims
- 0397US10937652B1Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·11 cites·20 claims
- 0496US12424488B2Dual etch-stop layer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·2 cites·20 claims
- 0596US11798910B2Self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·2 cites·20 claims
- 0695US11942364B2Selective deposition of a protective layer to reduce interconnect structure critical dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
- 0795US11362030B2Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·3 cites·20 claims
- 0894US11848207B2Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·2 cites·20 claims
- 0994US10700264B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 30, 2020·4 cites·20 claims
- 1094US10355198B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·8 cites·20 claims
- 1192US10636963B2Magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·7 cites·20 claims
- 1291US11854965B2Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1391US10270028B1Memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·7 cites·20 claims
- 1491US2025364401A1Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1590US11521896B2Selective deposition of a protective layer to reduce interconnect structure critical dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
- 1690US10985312B2Methods of fabricating magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode via and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·2 cites·20 claims
- 1788US10461246B2Memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·4 cites·20 claims
- 1888US9799558B2Method for forming conductive structure in semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 24, 2017·5 cites·20 claims
- 1987US9318439B2Interconnect structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·6 cites·20 claims
- 2087US2025308899A1Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2186US12368046B2Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 2286US2025275482A1Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2386US2025349608A1Dual etch-stop layer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2486US2025308932A1Methods of Etching Metals in Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2585US12354881B2Methods of etching metals in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 2685US12302761B2Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2785US11798840B2Self-assembled dielectric on metal RIE lines to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·1 cites·18 claims
- 2885US11569127B2Double patterning approach by direct metal etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·1 cites·20 claims
- 2984US11171052B2Methods of forming interconnect structures with selectively deposited pillars and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·3 cites·20 claims
- 3084US9818644B2Interconnect structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·3 cites·20 claims
- 3184US2025329638A1Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3283US12464954B2Magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 3383US12074059B2Semiconductor arrangement and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 3483US11158518B2Methods of etching metals in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·2 cites·20 claims
- 3583US9269668B2Interconnect having air gaps and polymer wrapped conductive linesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 23, 2016·4 cites·20 claims
- 3683US2025316532A1Self-assembled dielectric on metal rie lines to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3783US2025266387A1Self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3882US12322723B2Self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 3981US12362231B2Self-assembled dielectric on metal rie lines to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 4081US11031284B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·1 cites·20 claims
- 4180US12315817B2Dielectric on wire structure to increase processing window for overlying viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 4280US11854836B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·0 cites·20 claims
- 4380US10741417B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 11, 2020·2 cites·20 claims
- 4480US2025280735A1Structure and Method for an MRAM Device with a Multi-Layer Top ElectrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4580US2024088022A1Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4679US12125795B2Integrated chip with inter-wire cavitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 4779US11856866B2Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4879US2024371779A1Integrated chip with inter-wire cavitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4979US2025259932A1Dielectric on wire structure to increase processing window for overlying viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5078US12406924B2Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·18 claims
Showing the top 50 of 108 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →