Inventor · disambiguated record
Hsin-Han Tsai
Also filed as: TSAI HSIN-HAN
12 granted patents·13 pending applications·18 citations·filing 2013–2025
86Inventor score
Top patents by PatentIndex Score
25 records- 0195US11430698B2In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
- 0294US12255104B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·1 cites·20 claims
- 0392US11842928B2In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·1 cites·20 claims
- 0490US9064466B2Liquid crystal display and shift register device thereofHANNSTAR DISPLAY CORP·Filed 2013·Granted Jun 23, 2015·12 cites·19 claims
- 0584US12183638B2In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 0684US2025366118A1Semiconductor gate and contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0782US2024379448A1In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0880US2025357127A1In-Situ Tungsten for Gate Stack of Multigate DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0978US2025366056A1Semiconductor device structure with metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1078US2025359167A1Gate Stack for Multigate DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1178US2025185344A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1277US12040235B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 1376US2025351562A1Metal Gate Electrode Formation Of Memory DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1475US2024387644A1Semiconductor gate and contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1574US10867864B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·1 cites·20 claims
- 1671US12484274B2Techniques for semiconductor gate and contact formation to reduce seam formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 1771US2024387682A1Metal gates and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1870US11437280B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 1970US2025038002A1In-Situ Tungsten for Gate Stack of Multigate DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2069US2025072051A1Gate Stack for Multigate DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2167US12464773B2Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 2265US12154964B2Metal gates with layers for transistor threshold voltage tuning and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 26, 2024·0 cites·20 claims
- 2363US12087637B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 10, 2024·0 cites·20 claims
- 2462US2024363424A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2554US2024387688A1Cap for gate stack of multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →