Inventor · disambiguated record
Hsiu-Hao Tsao
Also filed as: TSAO HSIU-HAO
13 granted patents·13 pending applications·16 citations·filing 2019–2025
86Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD26
Top patents by PatentIndex Score
26 records- 0195US11437498B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
- 0294US11996468B2Multi-gate device fabrication and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·3 cites·20 claims
- 0390US10861960B1FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·5 cites·20 claims
- 0489US2025357128A1Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0588US11282967B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·2 cites·20 claims
- 0682US11398384B2Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·1 cites·20 claims
- 0782US2024379364A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0881US11574846B2Gate formation of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·1 cites·20 claims
- 0979US2025366127A1Semiconductor Structure With Modified Spacer And Method For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1078US12444608B2Structure having gate spacers with projecting portions extending into a gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 1177US2025366147A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1276US11735651B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 1373US12198988B2Gate formation of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 1473US12068398B2Fin field-effect transistor with void and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 1573US2024371980A1Fin Field-Effect Transistor With Void and Method of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1673US2024313090A1Multi-gate device fabrication and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1772US2024321642A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1867US2023187535A1Semiconductor structure with modified spacer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1965US11961919B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 2064US2025149388A1Gate Formation Of Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2162US2023361191A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2261US12033895B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·20 claims
- 2361US2025385098A1Semiconductor device with metal gate structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2459US2025374614A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2555US2024355906A1Sti loss mitigation by radical oxidation treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2654US11664444B2Fin field-effect transistor with void and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →