Inventor · disambiguated record

Hsiao-Hui Tseng

Also filed as: TSENG HSIAO-HUI

53 granted patents·8 pending applications·277 citations·filing 2001–2025

98Inventor score

Technology areasH10W H10F H01L H10D H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD46 TAIWAN SEMICONDUCTOR MFG9 TSENG HSIAO-HUI2 KAO MIN-FENG1 TAIWAN SEMICONDUCTOR MANUFACTO1

Top patents by PatentIndex Score

61 records

0196US8513587B2Image sensor with anti-reflection layer and method of manufacturing the sameWANG TZU-JUI·Filed 2011·Granted Aug 20, 2013·31 cites·20 claims
0295US11227889B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
0395US10304886B2Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·12 cites·20 claims
0495US10276618B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·8 cites·20 claims
0594US11916100B2Multi-layer trench capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
0693US11430823B2Method for manufacturing semiconductor image sensor device having deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
0793US11404460B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
0893US9954022B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·7 cites·20 claims
0992US10825853B2Semiconductor image sensor device with deep trench isolations and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 3, 2020·3 cites·20 claims
1092US9728570B2Deep trench isolation fabrication for BSI image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·7 cites·20 claims
1191US9293502B2Semiconductor switching device separated by device isolationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 22, 2016·4 cites·20 claims
1290US9165970B2Back side illuminated image sensor having isolated bonding padsTSAI SHUANG-JI·Filed 2011·Granted Oct 20, 2015·8 cites·17 claims
1389US10566378B2Back side illuminated image sensor with reduced sidewall-induced leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·4 cites·20 claims
1489US9754993B2Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 5, 2017·5 cites·20 claims
1589US9570497B2Back side illuminated image sensor having isolated bonding padsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·4 cites·19 claims
1689US2025351596A1Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1788US6656785B2MIM process for logic-based embedded RAMTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 2, 2003·49 cites·18 claims
1887US8685820B2Multiple gate dielectric structures and methods of forming the sameTSENG HSIAO-HUI·Filed 2011·Granted Apr 1, 2014·8 cites·13 claims
1986US12211876B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
2086US11476295B2Back side illuminated image sensor with reduced sidewall-induced leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 18, 2022·2 cites·20 claims
2185US12464839B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
2285US10510789B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
2385US2024421177A1Back side illuminated image sensor with reduced sidewall-induced leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2484US11984353B2High capacitance MIM device with self aligned spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·1 cites·20 claims
2584US10777590B2Method for forming image sensor device structure with doping layer in light-sensing regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 15, 2020·1 cites·20 claims
2684US2025349610A1High capacitance mim device with spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2783US9281334B2Pickup device structure within a device isolation regionTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 8, 2016·2 cites·20 claims
2883US9048162B2CMOS image sensors and methods for forming the sameKAO MIN-FENG·Filed 2012·Granted Jun 2, 2015·2 cites·20 claims
2983US6383863B1Approach to integrate salicide gate for embedded DRAM devicesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 7, 2002·38 cites·22 claims
3083US2024363671A1Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3181US9627326B2Method for forming alignment marks and structure of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·2 cites·20 claims
3279US12243907B2Multi-layer trench capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 4, 2025·0 cites·20 claims
3379US11728366B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
3478US12438042B2High capacitance MIM device with self aligned spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
3578US12154927B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
3678US10734423B2Semiconductor switching device separated by device isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·20 claims
3778US9536810B1Flat pad structure for integrating complementary metal-oxide-semiconductor (CMOS) image sensor processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·3 cites·20 claims
3878US6833578B1Method and structure improving isolation between memory cell passing gate and capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 21, 2004·23 cites·21 claims
3976US11948949B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
4076US9355964B2Method for forming alignment marks and structure of sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 31, 2016·2 cites·20 claims
4175US12087801B2Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
4275US11901396B2Back side illuminated image sensor with reduced sidewall-induced leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·20 claims
4375US10910420B2Semiconductor switching device separate by device isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 2, 2021·0 cites·20 claims
4473US10074612B2Method for forming alignment marks and structure of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 11, 2018·1 cites·20 claims
4573US9076708B2CMOS image sensors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 7, 2015·0 cites·20 claims
4673US6436762B1Method for improving bit line to capacitor electrical failures on DRAM circuits using a wet etch-back to improve the bit-line-to-capacitor overlay marginsTAIWAN SEMICONDUCTOR MANUFACTO·Filed 2001·Granted Aug 20, 2002·19 cites·18 claims
4773US2025176198A1Multi-layer trench capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4872US9887234B2CMOS image sensor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 6, 2018·2 cites·20 claims
4970US8878242B1Pickup device structure within a device isolation regionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 4, 2014·0 cites·20 claims
5068US12261196B2Metal-insulator-metal device capacitance enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims

Showing the top 50 of 61 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →