Inventor · disambiguated record
Hsuan-Han Tseng
Also filed as: TSENG HSUAN-HAN
5 granted patents·4 pending applications·3 citations·filing 2021–2025
68Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD9
Top patents by PatentIndex Score
9 records- 0194US11916100B2Multi-layer trench capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 0284US11984353B2High capacitance MIM device with self aligned spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·1 cites·20 claims
- 0384US2025349610A1High capacitance mim device with spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0479US12243907B2Multi-layer trench capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 4, 2025·0 cites·20 claims
- 0578US12438042B2High capacitance MIM device with self aligned spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 0673US2025176198A1Multi-layer trench capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0768US12261196B2Metal-insulator-metal device capacitance enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 0866US2025194120A1Metal-insulator-metal device capacitance enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0960US2025287615A1Electronic component and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →