Inventor · disambiguated record

Hsien-Ta Tseng

Also filed as: TSENG HSIEN-TA

4 granted patents·5 pending applications·2 citations·filing 2018–2024

56Inventor score

Technology areasC30B

Files withGLOBALWAFERS CO LTD6 GLOBAL WAFERS CO LTD3

Top patents by PatentIndex Score

9 records

0182US11982019B2Crystal growth doping apparatus and crystal growth doping methodGLOBALWAFERS CO LTD·Filed 2022·Granted May 14, 2024·2 cites·16 claims
0265US2025092560A1Systems and methods for controlling a gas dopant vaporization rate during a crystal growth processGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
0361US12221718B2Systems and methods for controlling a gas dopant vaporization rate during a crystal growth processGLOBALWAFERS CO LTD·Filed 2022·Granted Feb 11, 2025·0 cites·20 claims
0457US12195871B2Systems and methods for controlling a gas dopant vaporization rate during a crystal growth processGLOBALWAFERS CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
0556US2024392467A1Methods for adding a plurality of dopant batches to an ingot puller apparatusGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
0652US12018400B2Methods and systems of capturing transient thermal responses of regions of crystal pullersGLOBALWAFERS CO LTD·Filed 2022·Granted Jun 25, 2024·0 cites·8 claims
0742US2020002840A1Systems for producing a monocrystalline ingot that involve monitoring neck growth moving averageGLOBAL WAFERS CO LTD·Filed 2018·Application pending·0 cites
0842US2020002839A1Monitoring a moving average of the ingot neck pull rate to control the quality of the neck for ingot growthGLOBAL WAFERS CO LTD·Filed 2018·Application pending·0 cites
0942US2020002838A1Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rateGLOBAL WAFERS CO LTD·Filed 2018·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →