Inventor · disambiguated record
Hsiao-Chin Tuan
Also filed as: TUAN HSIAO-CHIN
57 granted patents·5 pending applications·469 citations·filing 1991–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD37IND TECH RES INST7TAIWAN SEMICONDUCTOR MFG4CHENG CHIH-CHANG3KALNITSKY ALEX3
Top patents by PatentIndex Score
62 records- 0199US11063038B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·7 cites·20 claims
- 0298US10050033B1High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·18 cites·20 claims
- 0395US11823959B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·20 claims
- 0494US10629592B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·7 cites·20 claims
- 0593US12500193B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·1 cites·20 claims
- 0693US5266514AMethod for producing a roughened surface capacitorIND TECH RES INST·Filed 1992·Granted Nov 30, 1993·201 cites·20 claims
- 0792US11705449B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 18, 2023·1 cites·20 claims
- 0892US10964692B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·5 cites·20 claims
- 0992US8389348B2Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronicsTHEI KONG-BENG·Filed 2010·Granted Mar 5, 2013·13 cites·19 claims
- 1091US8664718B2Power MOSFETs and methods for forming the sameCHENG CHIH-CHANG·Filed 2012·Granted Mar 4, 2014·12 cites·20 claims
- 1190US12211926B2Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·1 cites·20 claims
- 1289US2025359085A1Reduced surface field layer in varactorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1388US8445955B2Quasi-vertical structure for high voltage MOS deviceCHENG CHIH-CHANG·Filed 2010·Granted May 21, 2013·9 cites·14 claims
- 1488US2025120153A1Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1587US8461647B2Semiconductor device having multi-thickness gate dielectricCHOU HSUEH-LIANG·Filed 2010·Granted Jun 11, 2013·11 cites·13 claims
- 1685US12464738B2Integrated chip including a device with a reduced surface field regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1784US11302691B2High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
- 1883US12363998B2Recessed gate for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1983US10535752B2Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·2 cites·20 claims
- 2083US2025311405A1Recessed gate for an mv deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2182US11133226B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 28, 2021·2 cites·20 claims
- 2281US11527531B2Recessed gate for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 13, 2022·2 cites·20 claims
- 2381US8507988B2High voltage devices, systems, and methods for forming the high voltage devicesYAO CHIH-WEN·Filed 2010·Granted Aug 13, 2013·9 cites·17 claims
- 2480US12439679B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 2580US9735266B2Self-aligned contact for trench MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 15, 2017·4 cites·20 claims
- 2679US10790279B2High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·1 cites·20 claims
- 2779US5395784AMethod of manufacturing low leakage and long retention time DRAMIND TECH RES INST·Filed 1993·Granted Mar 7, 1995·40 cites·15 claims
- 2877US10510750B2High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 2975US11646308B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·0 cites·20 claims
- 3075US9431107B2Memory devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Aug 30, 2016·3 cites·21 claims
- 3174US11948938B2Recessed gate for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3274US10043919B2Memory devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 7, 2018·2 cites·20 claims
- 3373US11978810B2Method for forming an IC including a varactor with reduced surface field regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·0 cites·20 claims
- 3473US11251314B2Memory devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 3572US9236326B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 12, 2016·2 cites·20 claims
- 3672US5196367AModified field isolation process with no channel-stop implant encroachmentIND TECH RES INST·Filed 1991·Granted Mar 23, 1993·47 cites·16 claims
- 3771US6306759B1Method for forming self-aligned contact with linerVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Oct 23, 2001·19 cites·17 claims
- 3870US8704312B2High voltage devices and methods of forming the high voltage devicesCHENG CHIH-CHANG·Filed 2010·Granted Apr 22, 2014·3 cites·20 claims
- 3970US8633086B2Power devices having reduced on-resistance and methods of their manufactureKALNITSKY ALEX·Filed 2009·Granted Jan 21, 2014·3 cites·24 claims
- 4069US11710712B2Semiconductor device and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 4168US8497551B2Self-aligned contact for trench MOSFETKALNITSKY ALEX·Filed 2010·Granted Jul 30, 2013·2 cites·20 claims
- 4267US10770598B2Memory devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·0 cites·20 claims
- 4366US9601411B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·1 cites·20 claims
- 4465US11251286B2Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 15, 2022·0 cites·20 claims
- 4565US11011619B2Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·0 cites·20 claims
- 4664US11018266B2Reduced surface field layer in varactorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·0 cites·20 claims
- 4759US8390024B2Electrostatic discharge (ESD) protection circuitREN LIPING·Filed 2010·Granted Mar 5, 2013·2 cites·20 claims
- 4854US10014291B2SiC crystalline on Si substrates to allow integration of GaN and Si electronicsTHEI KONG BENG·Filed 2013·Granted Jul 3, 2018·0 cites·20 claims
- 4953US10510902B2Memory devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
- 5053US10381259B2Semiconductor device with localized carrier lifetime reduction and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 13, 2019·0 cites·16 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →