Inventor · disambiguated record
Hsiao-Lei Wang
Also filed as: WANG HSIAO-LEI
7 granted patents·7 pending applications·105 citations·filing 2000–2024
83Inventor score
Top patents by PatentIndex Score
14 records- 0183US6703273B2Aggressive capacitor array cell layout for narrow diameter DRAM trench capacitor structures via SOI technologyPROMOS TECHNOLOGIES INC·Filed 2002·Granted Mar 9, 2004·45 cites·27 claims
- 0279US6391706B2Method for making deep trench capacitors for DRAMs with reduced faceting at the substrate edge and providing a more uniform pad Si3N4layer across the substratePROMOS TECHNOLOGIES INC·Filed 2001·Granted May 21, 2002·26 cites·17 claims
- 0376US6680237B2Method of manufacturing deep trench capacitorPROMOS TECHNOLOGIES INC·Filed 2001·Granted Jan 20, 2004·22 cites·20 claims
- 0466US2024429347A1RGB FULL-COLOR InGaN-BASED LED AND METHOD FOR PREPARING THE SAMEWANG HSIAO LEI·Filed 2024·Application pending·0 cites
- 0563US6444524B1Method for forming a trench capacitorPROMOS TECHNOLOGIES INC·Filed 2000·Granted Sep 3, 2002·11 cites·13 claims
- 0658US8012810B2Low parasitic capacitance bit line process for stack DRAMINOTERA MEMORIES INC·Filed 2010·Granted Sep 6, 2011·1 cites·18 claims
- 0750US12295185B2Epitaxial substrate having a 2D material interposer, method for manufacturing the epitaxial substrate, and device prepared from the epitaxial substrateWANG HSIAO LEI·Filed 2022·Granted May 6, 2025·0 cites·10 claims
- 0848US2022149238A1RGB FULL-COLOR InGaN-BASED LED AND METHOD FOR PREPARING THE SAMEWANG HSIAO LEI·Filed 2020·Application pending·0 cites
- 0942US2025234683A1Manufacturing method for rgb ingan-based micro led, and device manufactured therebyWANG HSIAO LEI·Filed 2022·Application pending·0 cites
- 1040US2011084325A1Dram structure with a low parasitic capacitance and method of making the sameWANG HSIAO-LEI·Filed 2009·Application pending·0 cites
- 1139US2023046307A1Epitaxial substrate with 2d material interposer, manufacturing method, and manufacturing assemblyWANG HSIAO LEI·Filed 2020·Application pending·0 cites
- 1235US2011086490A1Single-side implanting process for capacitors of stack dramINOTERA MEMORIES INC·Filed 2010·Application pending·0 cites
- 1333US2003045119A1Method for forming a bottle-shaped trenchFiled 2001·Application pending·0 cites
- 1429US10297446B2Encapsulated substrate, manufacturing method, high band-gap device having encapsulated substrateWANG HSIAO LEI·Filed 2018·Granted May 21, 2019·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →