Inventor · disambiguated record
Hsiao-Che Wu
Also filed as: WU HIAO · WU HSIAO C · WU HSIAO CHE
17 granted patents·23 pending applications·194 citations·filing 1978–2023
94Inventor score
Files withPROMOS TECHNOLOGIES INC30PROMOS TECH INC2WU HSIAO-CHE2EXTRUDED METALS1HUAIAN IMAGING DEVICE MFT CORP1
Top patents by PatentIndex Score
40 records- 0182US6270397B1Chemical mechanical polishing device with a pressure mechanismPROMOS TECHNOLOGIES INC·Filed 2000·Granted Aug 7, 2001·24 cites·16 claims
- 0278US7436526B2Real-time system for monitoring and controlling film uniformity and method of applying the samePROMOS TECHNOLOGIES INC·Filed 2007·Granted Oct 14, 2008·8 cites·20 claims
- 0376US6439244B1Pedestal design for a sputter clean chamber to improve aluminum gap filling abilityPROMOS TECHNOLOGIES INC·Filed 2000·Granted Aug 27, 2002·20 cites·21 claims
- 0475US6393210B1Rapid thermal processing method and apparatusPROMOS TECHNOLOGIES INC·Filed 1999·Granted May 21, 2002·46 cites·16 claims
- 0574US7276753B2Dynamic random access memory cell and fabricating method thereofPROMOS TECHNOLOGIES INC·Filed 2005·Granted Oct 2, 2007·6 cites·6 claims
- 0673US7932565B2Integrated circuit structure having bottle-shaped isolationPROMOS TECHNOLOGIES INC·Filed 2008·Granted Apr 26, 2011·6 cites·18 claims
- 0773US6360772B1Mass flow controllerPROMOS TECHNOLOGIES INC·Filed 2000·Granted Mar 26, 2002·17 cites·16 claims
- 0872US7312131B2Method for forming multilayer electrode capacitorPROMOS TECHNOLOGIES INC·Filed 2004·Granted Dec 25, 2007·19 cites·24 claims
- 0972US6413384B1Method for maintaining the cleanness of a vacuum chamber of a physical vapor deposition systemPROMOS TECHNOLOGIES INC·Filed 2000·Granted Jul 2, 2002·12 cites·21 claims
- 1072US2024134123A1Photonic integrated circuit structurePROMOS TECH INC·Filed 2023·Application pending·0 cites
- 1169US2024126017A1Photonic integrated circuit structurePROMOS TECH INC·Filed 2022·Application pending·0 cites
- 1266US7781830B2Recessed channel transistor and method for preparing the samePROMOS TECHNOLOGIES INC·Filed 2008·Granted Aug 24, 2010·3 cites·11 claims
- 1362US7510955B2Method of fabricating multi-fin field effect transistorPROMOS TECHNOLOGIES INC·Filed 2006·Granted Mar 31, 2009·2 cites·13 claims
- 1457US6280295B1Apparatus and method to polish a wafer using abrasive flow machiningPROMOS TECHNOLOGIES INC·Filed 2000·Granted Aug 28, 2001·6 cites·18 claims
- 1555US4216666AMethod of relieving stress in extruded sectionsEXTRUDED METALS·Filed 1978·Granted Aug 12, 1980·15 cites·1 claims
- 1654US2008199614A1Method for improving atomic layer deposition performance and apparatus thereofPROMOS TECHNOLOGIES INC·Filed 2007·Application pending·0 cites
- 1751US7005341B1Dynamic random access memory cell and fabricating method thereofPROMOS TECHNOLOGIES INC·Filed 2004·Granted Feb 28, 2006·5 cites·17 claims
- 1851US6551928B2Method of forming a semiconductor device with a multi-layer WSix film with small grain size structurePROMOS TECHNOLOGIES INC·Filed 2001·Granted Apr 22, 2003·4 cites·13 claims
- 1949US2009127618A1Multi-fin field effect transistorPROMOS TECHNOLOGIES INC·Filed 2009·Application pending·0 cites
- 2045US2009061635A1Method for forming micro-patternsPROMOS TECHNOLOGIES INC·Filed 2008·Application pending·0 cites
- 2145US2009317982A1Atomic layer deposition apparatus and method for preparing metal oxide layerPROMOS TECHNOLOGIES INC·Filed 2008·Application pending·0 cites
- 2244US2009023268A1Isolation method of active area for semiconductor devicePROMOS TECHNOLOGIES INC·Filed 2008·Application pending·0 cites
- 2344US2009039428A1Fabricating method for silicon on insulator and structure thereofPROMOS TECHNOLOGIES INC·Filed 2008·Application pending·0 cites
- 2443US7919384B2Method of making planar-type bottom electrode for semiconductor devicePROMOS TECHNOLOGIES INC·Filed 2008·Granted Apr 5, 2011·0 cites·19 claims
- 2543US7049205B2Stacked capacitor and method for preparing the samePROMOS TECHNOLOGIES INC·Filed 2004·Granted May 23, 2006·1 cites·13 claims
- 2643US2009189246A1Method of forming trench isolation structures and semiconductor device produced therebyWU HSIAO-CHE·Filed 2008·Application pending·0 cites
- 2742US2008076241A1Method for reducing stress between a conductive layer and a mask layer and use of the samePROMOS TECHNOLOGIES INC·Filed 2006·Application pending·0 cites
- 2841US2008102207A1Gas delivering system for in situ thermal treatment and thin film deposition and use of the samePROMOS TECHNOLOGIES INC·Filed 2007·Application pending·0 cites
- 2940US2008316674A1Capacitors and methods for fabricating the samePROMOS TECHNOLOGIES INC·Filed 2007·Application pending·0 cites
- 3040US2006086963A1Stacked capacitor and method for preparing the samePROMOS TECHNOLOGIES INC·Filed 2005·Application pending·0 cites
- 3140US2008111212A1Capacitance structure of a semiconductor device and method for manufacturing the samePROMOS TECHNOLOGIES INC·Filed 2006·Application pending·0 cites
- 3240US2019096939A1Image Sensor, Color Filter Array, and Preparation Method ThereofHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Application pending·0 cites
- 3339US2008128892A1Intergrated Circuits Device Having a Reinforcement StructurePROMOS TECHNOLOGIES INC·Filed 2006·Application pending·0 cites
- 3439US2007210374A1Vertical-type surrounding gate semiconductor deviceWU HSIAO-CHE·Filed 2006·Application pending·0 cites
- 3539US2007284643A1Capacitor structure of semiconductor memory and method for preparing the samePROMOS TECHNOLOGIES INC·Filed 2006·Application pending·0 cites
- 3639US2008132053A1Method for Preparing an Intergrated Circuits Device Having a Reinforcement StructurePROMOS TECHNOLOGIES INC·Filed 2006·Application pending·0 cites
- 3737US2003100184A1Method of forming a semiconductor device with a multi-layer WSix film with small grain size structure, and a semiconductor device having a polysilicon layer with a multi-layer WSix film formed thereonFiled 2002·Application pending·0 cites
- 3835US2003044529A1Method of depositing thin filmFiled 2001·Application pending·0 cites
- 3934US2002043727A1Bonding pad structureFiled 2001·Application pending·0 cites
- 4024US2003013211A1Mend method for breakage dielectric filmFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →