Inventor · disambiguated record
Hsin-Hao Yeh
Also filed as: YEH HSIN-HAO
9 granted patents·3 pending applications·16 citations·filing 2018–2024
82Inventor score
Top patents by PatentIndex Score
12 records- 0193US10510861B1Gaseous spacer and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·11 cites·20 claims
- 0283US12261036B2Forming low-stress silicon nitride layer through hydrogen treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 0383US2024379346A1Forming low-stress silicon nitride layer through hydrogen treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0482US11393674B2Forming low-stress silicon nitride layer through hydrogen treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 19, 2022·2 cites·20 claims
- 0579US11830727B2Forming low-stress silicon nitride layer through hydrogen treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 0679US10868131B2Gaseous spacer and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 0776US2024347355A1Method for using a system for annealing a wafer and system for annealing a waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0875US11855213B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 0975US2024097036A1FinFET Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1074US11296225B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 5, 2022·1 cites·20 claims
- 1163US12051603B2System and method for annealing die and waferSYSTEM FOR ANNEALING DIE AND WAFER·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 1257US11011394B2System and method for annealing die and waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 18, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →