Inventor · disambiguated record
Hugo Biard
Also filed as: BIARD HUGO
4 granted patents·12 pending applications·0 citations·filing 2020–2023
51Inventor score
Files withSOITEC SILICON ON INSULATOR16
Top patents by PatentIndex Score
16 records- 0152US2024395603A1Composite structure comprising a useful monocrystalline sic layer on a polycrystalline sic carrier substrate and method for manufacturing said structureSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 0252US2025006492A1Method for manufacturing a composite structure comprising a thin film of monocrystalline sic on a carrier substrate of polycrystalline sicSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 0351US2025140602A1Composite structure and manufacturing method thereofSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 0451US2024392476A1Method for transferring a monocrystalline sic layer onto a polycrystalline sic carrier using a poly crystalline sic intermediate layerSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 0550US2025063784A1Process for the manufacture of a semiconductor structure comprising a polycrystalline silicon carbide substrate and an active layer of single-crystal silicon carbideSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 0649US2025233031A1Substrate for electronic deviceSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 0749US2025125140A1Method for manufacturing a non-deformable p-sic waferSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 0848US12198983B2Method for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline SiCSOITEC SILICON ON INSULATOR·Filed 2020·Granted Jan 14, 2025·0 cites·20 claims
- 0948US2024112908A1Method for manufacturing a composite structure comprising a thin single-crystal semiconductor layer on a carrier substrateSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1048US2024170284A1Method for producing a silicon carbide-based semiconductor structure and intermediate composite structureSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1147US12320031B2Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiCSOITEC SILICON ON INSULATOR·Filed 2021·Granted Jun 3, 2025·0 cites·18 claims
- 1247US2024145294A1Method for manufacturing a silicon-carbide-based semiconductor structure and intermediate composite structureSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1345US2024379351A1Method for fabricating a polycrystalline silicon carbide carrier substrateSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1442US2023230868A1Detachable temporary substrate compatible with very high temperatures and process for transferring a working layer from said substrateSOITEC SILICON ON INSULATOR·Filed 2021·Application pending·0 cites
- 1541US12159781B2Method for manufacturing a composite structure comprising a thin layer made of monocrystalline sic on a carrier substrate made of SiCSOITEC SILICON ON INSULATOR·Filed 2021·Granted Dec 3, 2024·0 cites·18 claims
- 1640US12362173B2Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on an SiC carrier substrateSOITEC SILICON ON INSULATOR·Filed 2020·Granted Jul 15, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →