Inventor · disambiguated record

Huang-Lin Chao

Also filed as: CHAO HUANG CHENG · CHAO HUANG-LIN

80 granted patents·51 pending applications·45 citations·filing 2001–2025

98Inventor score

Technology areasH10P H10D H10W B24B B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD129 INTEL CORP1

Top patents by PatentIndex Score

131 records

0196US11581416B1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
0295US11978674B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·2 cites·18 claims
0393US11894461B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
0492US11183574B2Work function layers for transistor gate electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·5 cites·20 claims
0592US11018256B2Selective internal gate structure for ferroelectric semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·4 cites·20 claims
0691US11049937B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 29, 2021·4 cites·19 claims
0789US11752592B2Slurry enhancement for polishing systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·1 cites·20 claims
0889US11594633B2Selective internal gate structure for ferroelectric semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·1 cites·20 claims
0989US11495471B2Slurry compositions for chemical mechanical planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·2 cites·20 claims
1089US11267987B2Chemical mechanical polishing slurry composition and method of polishing metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·2 cites·20 claims
1189US10714395B2Fin isolation structure for FinFET and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·4 cites·20 claims
1289US2025359251A1Tuning Threshold Voltage in Field-Effect TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1388US11626493B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·1 cites·20 claims
1488US11177259B2Multi-threshold gate structure with doped gate dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·4 cites·20 claims
1588US11038029B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·3 cites·20 claims
1687US11925033B2Embedded backside memory on a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·1 cites·20 claims
1787US2025366075A1Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1887US2025357129A1Fluorine incorporation method for nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1986US2025351481A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2085US12349427B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
2184US12484277B2Tuning threshold voltage in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
2284US12441912B2Chemical mechanical polishing slurry composition and method of polishing metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
2384US12250824B2Ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
2484US12034058B2Gate stack treatment for ferroelectric transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
2584US2025323056A1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2684US2024322000A1Gate stack treatment for ferroelectric transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2784US2025311271A1Fabrication of field effect transistors with ferroelectric materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2883US12451359B2Fluorine incorporation method for nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
2983US12369384B2Semiconductor device structure including dielectric region with plurality of different oxidation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
3083US12278287B2Selective internal gate structure for ferroelectric semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
3183US2025366092A1Work function material and manufacturing process thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3282US12040364B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
3382US2023356356A1Slurry enhancement for polishing systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3482US2025220980A1Selective internal gate structure for ferroelectric semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3582US2025324728A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3681US12213323B2Embedded backside memory on a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
3781US12176217B2Method for manufacturing a semiconductor using slurryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
3881US11942373B2Fin isolation structure for FinFET and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·20 claims
3981US11031291B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
4081US11018022B2Method for forming semiconductor device structure having oxide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 25, 2021·2 cites·20 claims
4181US2025357203A1Method for forming a contact plug by bottom-up metal growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4280US12406859B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
4380US2025366002A1Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4480US2024381667A1Embedded backside memory on a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4580US2025063778A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4680US2024363726A1Capping layer for guide electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4779US12477784B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
4879US2024150192A1Gate Structures In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4979US2025359211A1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
5078US2024395564A1Semiconductor device structure having gate dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites

Showing the top 50 of 131 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →