Inventor · disambiguated record
Hui-Chi Chen
Also filed as: CHEN HUI · CHEN HUI-CHI
49 granted patents·15 pending applications·77 citations·filing 2008–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD58FAIRCHILD SEMICONDUCTOR3CHEN HUI1IPG PHOTONICS CORP1MURPHY JAMES J1
Top patents by PatentIndex Score
64 records- 0196US11443984B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
- 0296US10163704B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·14 cites·22 claims
- 0393US11145564B2Multi-layer passivation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·9 cites·20 claims
- 0492US11437331B2Chip structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 6, 2022·6 cites·20 claims
- 0592US11342408B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 0692US10529824B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·6 cites·20 claims
- 0791US11728375B2Metal-insulator-metal (MIM) capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·1 cites·20 claims
- 0891US11670608B2Prevention of metal pad corrosion due to exposure to halogenTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·2 cites·20 claims
- 0991US11521970B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
- 1091US2025364457A1Chip structure with conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1188US10861810B2Shielding structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·5 cites·20 claims
- 1286US12477756B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 1386US12218213B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·1 cites·20 claims
- 1485US12406952B2Chip structure with conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 1585US2025351539A1Post gate dielectric processing for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1684US11688759B2Metal-insulator-metal capacitive structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
- 1784US10734474B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·2 cites·19 claims
- 1883US11605720B2Metal gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·1 cites·20 claims
- 1982US12183697B2Semiconductor device having a metal pad and a protective layer for corrosion prevention due to exposure to halogenTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2082US11031458B2Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
- 2181US2025140722A1Semiconductor device having a metal pad and a protective layer for corrosion prevention due to exposure to halogenTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2280US11189538B2Semiconductor structure with polyimide packaging and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·3 cites·20 claims
- 2380US2025359116A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2479US12211845B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 2579US12171091B2Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 2679US11923405B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 2778US12433011B2Post gate dielectric processing for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 2878US2025366056A1Semiconductor device structure with metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2978US2024381608A1Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3077US2025359217A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3176US12057419B2Method for forming chip structure with conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 3276US2025311307A1Forming low-resistance capping layer over metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3376US2025351562A1Metal Gate Electrode Formation Of Memory DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3475US11222946B2Semiconductor device including a high density MIM capacitor and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·2 cites·20 claims
- 3574US12041760B2Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 3674US10468478B2Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·1 cites·20 claims
- 3773US8198196B1High aspect ratio trench structures with void-free fill materialMURPHY JAMES J·Filed 2011·Granted Jun 12, 2012·5 cites·12 claims
- 3873US8039401B2Structure and method for forming hybrid substrateFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Oct 18, 2011·4 cites·18 claims
- 3973US2024379796A1Forming Low-Resistance Capping Layer Over Metal Gate ElectrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4073US2024413221A1Integrated circuit device with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4172US12057486B2Metal gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·20 claims
- 4272US11362170B2Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 4372US10734283B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·1 cites·20 claims
- 4471US2025324672A1Method of manufacturing semiconductor devices and semiconductor devices with dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4569US11735484B2Post gate dielectric processing for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 22, 2023·0 cites·20 claims
- 4669US11404558B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 4768US12464789B2Semiconductor device structure and method for forming the semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 4868US12074206B2Integrated circuit device with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 4967US12464773B2Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 5065US12414329B2Forming low-resistance capping layer over metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·23 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →