Inventor · disambiguated record

Hung-Hsu Chen

Also filed as: CHEN HUNG-HSU

31 granted patents·13 pending applications·29 citations·filing 2015–2025

94Inventor score

Technology areasH10P H10D H10W

Files withTAIWAN SEMICONDUCTOR MFG CO LTD44

Top patents by PatentIndex Score

44 records

0197US11232947B1Ammonium fluoride pre-clean protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·6 cites·20 claims
0293US11348839B2Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 31, 2022·5 cites·20 claims
0392US10755917B2Treatment for adhesion improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·5 cites·20 claims
0492US10535748B2Method of forming a contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
0591US11373905B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·20 claims
0685US12300542B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
0785US2025287628A1Contact with a Silicide RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0884US12218012B2Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
0983US2025293088A1Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1082US11342225B2Barrier-free approach for forming contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·2 cites·20 claims
1181US12009200B2Treatment for adhesion improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
1280US2025063783A1Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1379US12328890B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
1479US12300496B2Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
1579US11915976B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
1679US11810826B2Semiconductor devices with stacked silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
1779US2024387180A1Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1879US2025366016A1Method for forming dual silicide in manufacturing process of semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1979US2025349547A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2079US2025239762A1Ammonium fluoride pre-clean protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2178US9870995B2Formation of copper layer structure with self anneal strain improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·2 cites·20 claims
2277US2025364242A1Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2377US2024332076A1Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2476US12300900B2Ammonium fluoride pre-clean protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
2576US12166078B2Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
2676US11901229B2Barrier-free approach for forming contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
2776US2025159965A1Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2875US12087642B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
2975US2024387288A1Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3073US11031286B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·1 cites·20 claims
3171US11742210B2Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
3270US11594410B2Treatment for adhesion improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·0 cites·20 claims
3370US11411094B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
3469US12046510B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
3567US12419077B2Method for forming dual silicide in manufacturing process of semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
3667US11676868B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
3766US12438003B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
3865US11335774B2Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 17, 2022·0 cites·19 claims
3964US12456617B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
4061US11177172B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
4155US10483164B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·0 cites·20 claims
4255US2024429102A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4354US10840184B2Formation of copper layer structure with self anneal strain improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·0 cites·20 claims
4454US2024379759A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →