Inventor · disambiguated record
Huiming Cheng
Also filed as: CHENG HUIMING
5 granted patents·3 pending applications·142 citations·filing 2000–2023
74Inventor score
Files withINST METAL RESEARCH CAS3SHENZHEN INST ADV TECH2INST OF METAL RES OF THE CHINE1REN WENCAI1TSINGHUA BERKELEY SHENZHEN INST IN PREPARATION1
Top patents by PatentIndex Score
8 records- 0190US6517800B1Production of single-walled carbon nanotubes by a hydrogen arc discharge methodINST OF METAL RES OF THE CHINE·Filed 2000·Granted Feb 11, 2003·138 cites·18 claims
- 0272US2025027215A1Gas phase diffusion electrode, preparation method, and application for electrocatalyzing co2 to reduce and produce coSHENZHEN INST ADV TECH·Filed 2023·Application pending·0 cites
- 0372US2025027214A1Gas phase diffusion electrode, preparation method, and application for electrocatalyzing co2 to reduce and produce formic acidSHENZHEN INST ADV TECH·Filed 2023·Application pending·0 cites
- 0471US10508037B2Method for continuously preparing graphene oxide nanoplateletINST METAL RESEARCH CAS·Filed 2017·Granted Dec 17, 2019·1 cites·12 claims
- 0565US9216559B2Method for transferring graphene nondestructively with low costREN WENCAI·Filed 2012·Granted Dec 22, 2015·3 cites·9 claims
- 0654US11820053B2Efficient method for preparing highly-directional highly-dense two-dimensional material filmINST METAL RESEARCH CAS·Filed 2018·Granted Nov 21, 2023·0 cites·17 claims
- 0740US2019256356A1Single-walled Carbon Nanotube Flexible Transparent Conductive Thin Film with Carbon Welded Structure and Preparation Method ThereforINST METAL RESEARCH CAS·Filed 2017·Application pending·0 cites
- 0822US12116665B2Transition metal chalcogenide thin-layer material, preparation method and application thereofTSINGHUA BERKELEY SHENZHEN INST IN PREPARATION·Filed 2019·Granted Oct 15, 2024·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →