Inventor · disambiguated record
Huadong Gan
Also filed as: GAN HUADONG
34 granted patents·4 pending applications·277 citations·filing 2013–2024
97Inventor score
Top patents by PatentIndex Score
38 records- 0199US9780300B2Magnetic memory element with composite perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Oct 3, 2017·36 cites·22 claims
- 0299US9608038B2Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layerAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Mar 28, 2017·40 cites·20 claims
- 0398US9793319B2Multilayered seed structure for perpendicular MTJ memory elementAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Oct 17, 2017·46 cites·20 claims
- 0498US9166143B1Magnetic random access memory with multiple free layersAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Oct 20, 2015·41 cites·14 claims
- 0598US9070855B2Magnetic random access memory having perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Jun 30, 2015·40 cites·24 claims
- 0695US9748471B2Perpendicular magnetic memory element having magnesium oxide cap layerAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Aug 29, 2017·9 cites·20 claims
- 0792US10090456B2Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layerAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Oct 2, 2018·3 cites·20 claims
- 0892US9306154B2Magnetic random access memory with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Apr 5, 2016·6 cites·21 claims
- 0991US10050083B2Magnetic structure with multilayered seedAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Aug 14, 2018·11 cites·19 claims
- 1089US10361362B2Magnetic random access memory with ultrathin reference layerAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jul 23, 2019·2 cites·18 claims
- 1189US10008663B1Perpendicular magnetic fixed layer with high anisotropyAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jun 26, 2018·6 cites·17 claims
- 1286US9831421B2Magnetic memory element with composite fixed layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Nov 28, 2017·4 cites·24 claims
- 1385US9647032B2Spin-orbitronics device and applications thereofAVALANCHE TECHNOLOGY INC·Filed 2015·Granted May 9, 2017·4 cites·10 claims
- 1485US9082951B2Magnetic random access memory with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jul 14, 2015·5 cites·20 claims
- 1584US10032979B2Magnetic memory element with iridium anti-ferromagnetic coupling layerAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jul 24, 2018·2 cites·20 claims
- 1683US9396781B2Magnetic random access memory having perpendicular composite reference layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jul 19, 2016·3 cites·11 claims
- 1780US9871191B2Magnetic random access memory with ultrathin reference layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Jan 16, 2018·4 cites·20 claims
- 1880US9496489B2Magnetic random access memory with multilayered seed structureAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Nov 15, 2016·2 cites·19 claims
- 1979US10727400B2Magnetic random access memory with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2018·Granted Jul 28, 2020·1 cites·25 claims
- 2078US9871190B2Magnetic random access memory with ultrathin reference layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jan 16, 2018·2 cites·20 claims
- 2176US9024398B2Perpendicular STTMRAM device with balanced reference layerAVALANCHE TECHNOLOGY INC·Filed 2013·Granted May 5, 2015·3 cites·63 claims
- 2274US9231027B2Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jan 5, 2016·2 cites·18 claims
- 2372US9647202B2Magnetic random access memory with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted May 9, 2017·2 cites·6 claims
- 2471US9419207B2Magnetic random access memory with multilayered seed structureAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Aug 16, 2016·1 cites·16 claims
- 2569US10079338B2Magnetic memory element with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Sep 18, 2018·1 cites·20 claims
- 2663US9337417B2Magnetic random access memory with perpendicular interfacial anisotropyAVALANCHE TECHNOLOGY INC·Filed 2014·Granted May 10, 2016·1 cites·11 claims
- 2760US9634244B2Magnetic random access memory with perpendicular interfacial anisotropyAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Apr 25, 2017·0 cites·11 claims
- 2859US2025364006A1High Unidirectional Anisotropy Constant Amorphous Shield Layer For Shield ApplicationHEADWAY TECH INC·Filed 2024·Application pending·0 cites
- 2957US9548334B2Magnetic tunnel junction with perpendicular enhancement layer and thin reference layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jan 17, 2017·0 cites·6 claims
- 3055US9543506B2Magnetic random access memory with tri-layer reference layerAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Jan 10, 2017·0 cites·19 claims
- 3155US9444038B2Magnetic random access memory with nickel/transition metal multilayered seed structureAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Sep 13, 2016·0 cites·20 claims
- 3254US9559144B2Magnetic random access memory element having tantalum perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Jan 31, 2017·0 cites·20 claims
- 3353US10347691B2Magnetic memory element with multilayered seed structureAVALANCHE TECHNOLOGY INC·Filed 2018·Granted Jul 9, 2019·0 cites·21 claims
- 3452US10008540B2Spin-orbitronics device and applications thereofAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jun 26, 2018·0 cites·15 claims
- 3550US2025295039A1Tunnel Magneto-Resistive Sensor With Thin Nonmagnetic Material In Free LayerHEADWAY TECH INC·Filed 2024·Application pending·0 cites
- 3648US2014008744A1Memory system having thermally stable perpendicular magneto tunnel junction (mtj) and a method of manufacturing sameAVALANCHE TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 3747US2015194598A1Perpendicular sttmram device with balanced reference layerAVALANCHE TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 3840US9443577B2Voltage-switched magnetic random access memory (MRAM) and method for using the sameAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Sep 13, 2016·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →