Inventor · disambiguated record
Hung-Wen Hsu
Also filed as: HSU HUNG-WEN
33 granted patents·15 pending applications·126 citations·filing 2000–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD38TAIWAN SEMICONDUCTOR MFG4LITE ON ELECTRONICS GUANGZHOU2FIRST INT COMPUTER INC1HSU HUNG-WEN1
Top patents by PatentIndex Score
48 records- 0198US10163974B2Method of forming absorption enhancement structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·21 cites·20 claims
- 0296US10304898B2Absorption enhancement structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·9 cites·20 claims
- 0395US10395974B1Method for forming a thin semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 27, 2019·11 cites·20 claims
- 0492US10804315B2Absorption enhancement structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·2 cites·20 claims
- 0592US9917121B2BSI image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·6 cites·20 claims
- 0691USD973040SAntenna monitoring tool boxLITE ON ELECTRONICS GUANGZHOU·Filed 2020·Granted Dec 20, 2022·16 cites·1 claims
- 0791US8610229B2Sidewall for backside illuminated image sensor metal grid and method of manufacturing sameHSU HUNG-WEN·Filed 2011·Granted Dec 17, 2013·19 cites·20 claims
- 0886US11315972B2BSI image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·1 cites·20 claims
- 0985US10510799B2Absorption enhancement structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
- 1085US2025366241A1Uniform trenches in semiconductor devices and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1184US7595981B2Notebook computer and module of electronic device combinable with the sameFIRST INT COMPUTER INC·Filed 2008·Granted Sep 29, 2009·16 cites·20 claims
- 1283US11246235B2Waterproof structureLITE ON ELECTRONICS GUANGZHOU·Filed 2020·Granted Feb 8, 2022·1 cites·15 claims
- 1383US2025338644A1Backside deep trench isolation (bdti) structure for cmos image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1482US2025318290A1Stilted pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1581US11784211B2Integrated chip inductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 10, 2023·1 cites·20 claims
- 1681US10170536B1Magnetic memory with metal oxide etch stop layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·4 cites·20 claims
- 1781US9337225B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 10, 2016·2 cites·19 claims
- 1881US9293392B23DIC interconnect apparatus and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 22, 2016·4 cites·20 claims
- 1980US8791571B1System and method for preventing etch arcing during semiconductor processingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 29, 2014·4 cites·19 claims
- 2079US2024379716A1Stilted pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2177US2024387185A1By-site-comensated etch back for local planarization/topography adjustmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2276US11916091B2BSI image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·22 claims
- 2376US10269843B2BSI image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·1 cites·20 claims
- 2476US2025324624A1Resistor structure with capping structure on tfr layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2576US2025331304A1Manufacturing method for hybrid soi substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2674US10847560B2BSI image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·0 cites·17 claims
- 2774US9991303B2Image sensor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 5, 2018·2 cites·19 claims
- 2873US11522004B2Absorption enhancement structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·0 cites·20 claims
- 2973US2024021430A1By-site-comensated etch back for local planarization/topography adjustmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3072US2025072013A1Resistor structure with capping structure on tfr layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3171US2025063821A1Manufacturing method for hybrid soi substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3270US12396272B2Stilted pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 19, 2025·0 cites·20 claims
- 3370US2024371918A1Method (and related apparatus) for forming a resistor over a semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3470US2023361149A1Backside deep trench isolation (bdti) structure for cmos image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3569US2025043075A1Modified polyphenylene ether resin, preparation method thereof, and resin composition including thereofNAN YA PLASTICS CORP·Filed 2023·Application pending·0 cites
- 3668US12046477B2By-site-compensated etch back for local planarization/topography adjustmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 3763US10840287B23DIC interconnect apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 3860US12132075B2Method (and related apparatus) for forming a resistor over a semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 29, 2024·0 cites·20 claims
- 3960US6428849B1Method for the co-deposition of silicon and nitrogen on stainless steel surfaceNAT SCIENCE COUNCIL·Filed 2000·Granted Aug 6, 2002·4 cites·14 claims
- 4060US2025203886A1Thin film resistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4159US10361234B23DIC interconnect apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 23, 2019·0 cites·20 claims
- 4259US8889460B2Sidewall for backside illuminated image sensor metal grid and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 18, 2014·0 cites·20 claims
- 4355US9941320B23DIC interconnect apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·0 cites·20 claims
- 4453US2024088187A1Deep trench isolation structure for high resolution cis pixelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4552US10163972B2Image sensing device with photon blocking layer and anti-reflective coatingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·0 cites·20 claims
- 4650US11139239B2Recessed inductor structure to reduce step heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 5, 2021·0 cites·20 claims
- 4746US10164156B2Structure and formation method of image sensor structure with grid structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·18 claims
- 4844US10084056B1Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →