Inventor · disambiguated record
Hung-Shu Huang
Also filed as: HUANG HUNG-SHU
14 granted patents·4 pending applications·15 citations·filing 2018–2024
88Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD18
Top patents by PatentIndex Score
18 records- 0195US11532579B2Passivation structure with increased thickness for metal padsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
- 0294US12057418B2Passivation structure with increased thickness for metal padsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
- 0394US12022651B2Flash memory structure with enhanced floating gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 25, 2024·2 cites·20 claims
- 0489US11107825B2Flash memory structure with enhanced floating gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·2 cites·20 claims
- 0589US2025102887A1Device with a recessed gate electrode that has high thickness uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0686US12204232B2Semiconductor device having a gate electrode with a top peripheral portion and a top central portion, and the top peripheral portion is a protrusion or a depression surrounding the top central portionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 0786US10734398B2Flash memory structure with enhanced floating gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
- 0881US11846871B2Device with a recessed gate electrode that has high thickness uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 0978US11158648B2Double channel memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·2 cites·13 claims
- 1077US2024379695A1Unequal cmos image sensor pixel size to boost quantum efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1174US10510696B2Pad structure and manufacturing method thereof in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 1273US2025056877A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1372US11445104B2Device with a recessed gate electrode that has high thickness uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 1470US11574882B2Pad structure and manufacturing method thereof in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·0 cites·20 claims
- 1566US12159886B2Unequal CMOS image sensor pixel size to boost quantum efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 3, 2024·0 cites·20 claims
- 1665US12159870B2Semiconductor structure and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 1765US10840198B2Pad structure and manufacturing method thereof in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 1851US2024047542A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →