Inventor · disambiguated record
Huang-Yi Huang
Also filed as: HUANG HUANG-YI
41 granted patents·5 pending applications·104 citations·filing 2004–2024
97Inventor score
Top patents by PatentIndex Score
46 records- 0195US9899258B1Metal liner overhang reduction and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·20 cites·20 claims
- 0295US8940635B1Structure and method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·21 cites·20 claims
- 0390US9287170B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·8 cites·20 claims
- 0489US10685842B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·4 cites·20 claims
- 0588US11011611B2Semiconductor device with low resistivity contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·2 cites·20 claims
- 0688US10475654B2Wrap-around contact plug and method manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·3 cites·20 claims
- 0787US9805968B2Vertical structure having an etch stop over portion of the sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 31, 2017·3 cites·20 claims
- 0886US12512324B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·0 cites·20 claims
- 0985US9576892B2Semiconductor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 21, 2017·6 cites·20 claims
- 1085US9567668B2Plasma apparatus, magnetic-field controlling method, and semiconductor manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·3 cites·20 claims
- 1184US10636664B2Wrap-around contact plug and method manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 28, 2020·2 cites·20 claims
- 1284US9589800B2Method for integrated circuit patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·3 cites·20 claims
- 1383US10658234B2Formation method of interconnection structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 19, 2020·4 cites·20 claims
- 1483US9640428B2Self-aligned repairing process for barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 2, 2017·3 cites·20 claims
- 1582US11295956B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·1 cites·20 claims
- 1682US10103099B2Semiconductor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 16, 2018·3 cites·20 claims
- 1781US9514928B2Selective repairing process for barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 6, 2016·4 cites·19 claims
- 1877US11972951B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 1977US9478631B2Vertical-gate-all-around devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·4 cites·19 claims
- 2076US9624576B2Systems and methods for gap filling improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 18, 2017·3 cites·19 claims
- 2173US9129814B2Method for integrated circuit patterningTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 8, 2015·2 cites·20 claims
- 2271US10879075B2Wrap-around contact plug and method manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
- 2369US9966448B2Method of making a silicide beneath a vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 8, 2018·2 cites·20 claims
- 2467US11444028B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·0 cites·20 claims
- 2567US9601430B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·1 cites·20 claims
- 2664US10468260B2Wrap-around contact plug and method manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·0 cites·20 claims
- 2762US8980745B1Interconnect structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 17, 2015·1 cites·20 claims
- 2861US10714334B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·0 cites·20 claims
- 2959US10510664B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 3059US9166001B2Vertical structure and method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 20, 2015·0 cites·20 claims
- 3157US9735107B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·0 cites·20 claims
- 3257US9487864B2Metal capping process and processing platform thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·0 cites·20 claims
- 3356US9577093B2Vertical structure and method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·0 cites·20 claims
- 3455US9991125B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·0 cites·20 claims
- 3554US10700177B2Semiconductor device with low resistivity contact structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 3654US10283359B2Systems and methods for gap filling improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·0 cites·20 claims
- 3754US9873944B2Metal capping process and processing platform thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·0 cites·20 claims
- 3854US9324606B2Self-aligned repairing process for barrier layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 26, 2016·0 cites·20 claims
- 3954US2010099252A1Methods to completely eliminate or significantly reduce defects in copper metallization in IC manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
- 4051US9218986B2Hard mask edge cover schemeTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 22, 2015·0 cites·20 claims
- 4150US9543198B2Structure and method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·0 cites·20 claims
- 4250US2008176397A1Methods to completely eliminate or significantly reduce defects in copper metallization in IC manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 4346US2006226014A1Method and process for improved uniformity of electrochemical plating films produced in semiconductor device processingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 4444US2015206798A1Interconnect Structure And Method of FormingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Application pending·0 cites
- 4543US7262067B2Method for conductive film quality evaluationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 28, 2007·1 cites·23 claims
- 4642US2006094237A1Methods to completely eliminate or significantly reduce defects in copper metallization in IC manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →