Inventor · disambiguated record
Huai-Ying Huang
Also filed as: HUANG HUAI · HUANG HUAI-YING
39 granted patents·24 pending applications·178 citations·filing 2005–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD46TAIWAN SEMICONDUCTOR MFG8CHANG FENG-MING3HUNG SHENG CHIANG2HUANG HUAI-YING1
Top patents by PatentIndex Score
63 records- 0195US8315085B1SRAM timing tracking circuitCHANG FENG-MING·Filed 2011·Granted Nov 20, 2012·36 cites·20 claims
- 0293US12040018B2Method for programming memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·2 cites·20 claims
- 0392US8624327B2Integrated semiconductor structure for SRAM and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 7, 2014·14 cites·20 claims
- 0489US11527289B2Method for programming memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·2 cites·20 claims
- 0589US11404477B2Memory array and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
- 0689US7773407B28T low leakage SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 10, 2010·22 cites·16 claims
- 0788US8441829B2Stable SRAM cellHUANG HUAI-YING·Filed 2010·Granted May 14, 2013·13 cites·20 claims
- 0888US8406028B1Word line layout for semiconductor memoryLIN TZU-KUEI·Filed 2011·Granted Mar 26, 2013·11 cites·20 claims
- 0985US8330227B2Integrated semiconductor structure for SRAM and fabrication methods thereofHUNG SHENG CHIANG·Filed 2010·Granted Dec 11, 2012·9 cites·20 claims
- 1085US7535751B2Dual-port SRAM deviceTAIWAN SEMIOCONDUCTOR MFG CO L·Filed 2007·Granted May 19, 2009·30 cites·20 claims
- 1181US12281991B2Inspection layer to improve the detection of defects through optical systems and methods of inspecting semiconductor device for defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 1281US9431066B1Circuit having a non-symmetrical layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·6 cites·20 claims
- 1380US12412787B2Manufacturing process with atomic level inspectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 1479US2025336817A1Metallization layer and fabrication methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1578US12424548B2Metallization layer and fabrication methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 1678US12417806B2Method for programming memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 1778US7466581B2SRAM design with separated VSSTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 16, 2008·11 cites·13 claims
- 1878US2024371707A1Manufacturing process with atomic level inspectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1977US2025266085A1Integrated circuit device and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2077US2025216342A1Inspection Layer to Improve The Detection of Defects Through Optical Systems and Methods of Inspecting Semiconductor Device for DefectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2175US2025149387A1Method for non-destructive inspection of cell etch redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2274US11761905B2Inspection layer to improve the detection of defects through optical systems and methods of inspecting semiconductor device for defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
- 2374US7279755B2SRAM cell with improved layout designsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Oct 9, 2007·6 cites·20 claims
- 2473US12218014B2Method for non-destructive inspection of cell etch redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 2571US11856793B2Memory array and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2670US12131957B2Manufacturing process with atomic level inspectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 29, 2024·0 cites·20 claims
- 2770US8642451B2Active region patterning in double patterning processesCHANG FENG-MING·Filed 2010·Granted Feb 4, 2014·3 cites·20 claims
- 2869US8947900B2Stable SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 3, 2015·2 cites·20 claims
- 2968US8908409B2Stable SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 9, 2014·2 cites·20 claims
- 3067US12002755B2Metallization layer and fabrication methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
- 3166US12315560B2Integrated circuit device and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
- 3265US9761572B2Memory device layout, semiconductor device, and method of manufacturing memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·1 cites·20 claims
- 3365US9362399B2Well implant through dummy gate oxide in gate-last processTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·1 cites·20 claims
- 3462US7869262B2Memory device with an asymmetric layout structureTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jan 11, 2011·5 cites·15 claims
- 3562US2025331144A1Content Addressable Memory CellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3662US2025239304A1Memory device, method of manufacturing, and integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3760US2025063720A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3860US2025248072A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3959US2025351411A1Transistor produced using improved metal oxide processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4058US11974422B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 4158US11744060B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 4258US2025351434A1Semiconductor device including source/drain unit with tunnel layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4358US2025287605A1Semiconductor device with low current leakage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4458US2025240973A1Ferroelectric non-volatile memory and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4557US2024410854A1Semiconductor structure, integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4657US2025254916A1Semiconductor structure including intermediate conductive layers and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4757US2025212417A1Semiconductor structure including crack detector and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4856US12309989B2Stacked SRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 4956US2024414924A1Ferroelectric random access memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5055US9425085B2Structures, devices and methods for memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·0 cites·9 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →