Inventor · disambiguated record
Hun Woo Kye
Also filed as: KYE HUN WOO
24 granted patents·264 citations·filing 2000–2007
96Inventor score
Technology areasG11C
Files withHYNIX SEMICONDUCTOR INC20EXCEL SEMICONDUCTOR INC1HYUNDAI ELECTRONICS IND1NAT UNIV CHUNGBUK IND ACAD1SONG BOK NAM1
Top patents by PatentIndex Score
24 records- 0181US6288931B1Ferroelectric memory device having cell groups containing capacitors commonly coupled to transistorHYUNDAI ELECTRONICS IND·Filed 2000·Granted Sep 11, 2001·31 cites·7 claims
- 0277US7668011B2Serial flash memory device and precharging method thereofEXCEL SEMICONDUCTOR INC·Filed 2006·Granted Feb 23, 2010·15 cites·9 claims
- 0377US6751137B2Column repair circuit in ferroelectric memoryHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 15, 2004·24 cites·20 claims
- 0476US6845030B2Nonvolatile ferroelectric memory device and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jan 18, 2005·23 cites·25 claims
- 0575US6654274B2Ferroelectric memory and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 25, 2003·22 cites·32 claims
- 0674US6639857B2Coding cell of nonvolatile ferroelectric memory device and operating method thereof, and column repair circuit of nonvolatile ferroelectric memory device having the coding cell and method for repairing columnHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Oct 28, 2003·18 cites·16 claims
- 0770US6775172B2Nonvolatile ferroelectric memory and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Aug 10, 2004·18 cites·17 claims
- 0869US6906975B2Reference voltage generating circuit of nonvolatile ferroelectric memory deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 14, 2005·16 cites·12 claims
- 0966US6845031B2Nonvolatile ferroelectric memory device and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jan 18, 2005·14 cites·14 claims
- 1064US6597608B2Coding cell of nonvolatile ferroelectric memory device and operating method thereof, and column repair circuit of nonvolatile ferroelectric memory device having the coding cell and method for repairing columnHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 22, 2003·14 cites·29 claims
- 1162US6490189B1Boost voltage generating circuit for nonvolatile ferroelectric memory device and method for generating boost voltageHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 3, 2002·12 cites·26 claims
- 1256US6483738B2Method for driving nonvolatile ferroelectric memory deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Nov 19, 2002·9 cites·14 claims
- 1356US6480410B2Nonvolatile ferroelectric memory device and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Nov 12, 2002·9 cites·40 claims
- 1455US6868003B2Magnetic random access memoryHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 15, 2005·8 cites·15 claims
- 1555US6836425B2Coding cell of nonvolatile ferroelectric memory device and operating method thereof, and column repair circuit of nonvolatile ferroelectric memory device having the coding cell and method for repairing columnHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Dec 28, 2004·7 cites·6 claims
- 1655US6700812B2Nonvolatile ferroelectric memory device and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 2, 2004·8 cites·13 claims
- 1748US8031512B2Multiple-valued DRAMNAT UNIV CHUNGBUK IND ACAD·Filed 2006·Granted Oct 4, 2011·2 cites·6 claims
- 1842US6879510B2Nonvolatile ferroelectric memory device and method for operating the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Apr 12, 2005·3 cites·20 claims
- 1941US6600675B2Reference circuit in ferroelectric memory and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 29, 2003·3 cites·16 claims
- 2039US8059451B2Multiple valued dynamic random access memory cell and thereof array using single electron transistorSONG BOK NAM·Filed 2007·Granted Nov 15, 2011·1 cites·18 claims
- 2139US6791861B2Ferroelectric memory device and a method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Sep 14, 2004·2 cites·12 claims
- 2239US6687173B2Circuit for testing ferroelectric capacitor in FRAMHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Feb 3, 2004·2 cites·32 claims
- 2339US6498745B2Circuit for generating timing of reference plate line in nonvolatile ferroelectric memory device and method for driving reference cellHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Dec 24, 2002·2 cites·9 claims
- 2437US6754096B2Apparatus and method for driving ferroelectric memoryHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 22, 2004·1 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →