Inventor · disambiguated record
Huixian Lai
Also filed as: LAI HUIXIAN
11 granted patents·5 pending applications·0 citations·filing 2019–2025
80Inventor score
Top patents by PatentIndex Score
16 records- 0180US12237369B2Semiconductor device with shallow trench isolation having multi-stacked layers and method of forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·12 claims
- 0275US12408331B2Memory device and manufacturing method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·18 claims
- 0373US12156399B2Semiconductor memory device having plug and wireFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·11 claims
- 0473US2025133783A1Shallow trench isolation structure and semiconductor device with the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 0571US11824087B2Shallow trench isolation structure and semiconductor device with the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Nov 21, 2023·0 cites·8 claims
- 0670US12494231B2Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·7 claims
- 0769US11765886B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Sep 19, 2023·0 cites·10 claims
- 0867US11641736B2Memory device and manufacturing method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted May 2, 2023·0 cites·20 claims
- 0964US11688433B2Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·8 claims
- 1061US11069774B2Shallow trench isolation structure and semiconductor device with the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·19 claims
- 1160US2025203848A1Semiconductor device and manufacturing method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 1257US2024397703A1Semiconductor device and manufacturing method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 1354US2023345724A1Semiconductor memory device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Application pending·0 cites
- 1453US12068316B2Semiconductor device and method of forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Aug 20, 2024·0 cites·8 claims
- 1549US12069851B2Transistor, memory and method of forming sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2020·Granted Aug 20, 2024·0 cites·19 claims
- 1644US2022254785A1Electrical Contact StructureFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2020·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Huixian Lai files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →