Inventor · disambiguated record
Hung-Wei Li
Also filed as: LI HUNG WEI
20 granted patents·14 pending applications·9 citations·filing 2006–2025
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD29AU OPTRONICS CORP2ACER INC1IND TECH RES INST1QUANTA DISPLAY INC1
Top patents by PatentIndex Score
34 records- 0196US12176433B2Polarization enhancement structure for enlarging memory windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·2 cites·20 claims
- 0294US11855226B2Thin film transistor, semiconductor device and method of fabricating thin film transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 0386US2025344370A1Vertical dram structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0483US2025351366A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0582US12255236B2Self-aligned active regions and passivation layer and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 0682US12183825B2Thin film transistor including a hydrogen-blocking dielectric barrier and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 31, 2024·0 cites·20 claims
- 0781US12396211B2Thin film transistor, semiconductor device and method of fabricating thin film transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 0881US2025311294A1Thin film transistor and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0980US2025048682A1Polarization enhancement structure for enlarging memory windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1079US2025089294A1Thin film transistor including a hydrogen-blocking dielectric barrier and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1179US2024389304A1Vertical dram structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1278US12125920B2Dual-layer channel transistor and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 1378US2024379873A1Dual-layer channel transistor and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1477US2024136440A1Transistor Including Hydrogen Diffusion Barrier Film and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1576US2023387313A1Transistor including hydrogen diffusion barrier film and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1675US9728592B2Pixel structureAU OPTRONICS CORP·Filed 2016·Granted Aug 8, 2017·3 cites·20 claims
- 1775US2025318139A1Ferroelectric device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1875US2025194150A1Self-aligned active regions and passivation layer and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1974US11699655B2Transistor and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 11, 2023·0 cites·20 claims
- 2073US12302553B2Vertical DRAM structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 2173US11923459B2Transistor including hydrogen diffusion barrier film and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 2272US11817485B2Self-aligned active regions and passivation layer and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·0 cites·20 claims
- 2370US11929436B2Thin transistor including a hydrogen-blocking dielectric barrier and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·0 cites·20 claims
- 2470US11705516B2Polarization enhancement structure for enlarging memory windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 2570US11646379B2Dual-layer channel transistor and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·0 cites·20 claims
- 2669US12349363B2Ferroelectric device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 2765US11444025B2Transistor and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·0 cites·13 claims
- 2862US2023413571A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2961US12324194B2Source/drain engineering for ferroelectric field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·21 claims
- 3061US7393786B2Method for manufacturing copper wires on substrate of flat panel display deviceQUANTA DISPLAY INC·Filed 2006·Granted Jul 1, 2008·2 cites·20 claims
- 3150US2008170022A1Pixel driving circuitIND TECH RES INST·Filed 2007·Application pending·0 cites
- 3250US2022013356A1Thin-film transistors having hybrid crystalline semiconductor channel layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 3347US11355569B2Active device substrate comprising silicon layer and manufacturing method thereofAU OPTRONICS CORP·Filed 2020·Granted Jun 7, 2022·0 cites·11 claims
- 3438US7869284B1Erasing method for nonvolatile memoryACER INC·Filed 2009·Granted Jan 11, 2011·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →