Inventor · disambiguated record
Hung-Ta Lin
Also filed as: LIN HUNG-CHANG · LIN HUNG-TA
39 granted patents·6 pending applications·701 citations·filing 2002–2024
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG12TAIWAN SEMICONDUCTOR MFG CO LTD8YU CHEN-HUA8CHEN CHI-MING3NIEH CHUN-FENG3
Top patents by PatentIndex Score
45 records- 0199US8497177B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 30, 2013·252 cites·20 claims
- 0297US8629465B2Light-emitting diodes on concave texture substrateYU CHEN-HUA·Filed 2012·Granted Jan 14, 2014·16 cites·19 claims
- 0397US8440517B2FinFET and method of fabricating the sameLIN HUNG-TA·Filed 2010·Granted May 14, 2013·263 cites·20 claims
- 0495US8058082B2Light-emitting diode with textured substrateYU CHEN-HUA·Filed 2008·Granted Nov 15, 2011·28 cites·19 claims
- 0592US9716091B2Fin field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 0692US9099388B2III-V multi-channel FinFETsLIN HUNG-TA·Filed 2011·Granted Aug 4, 2015·13 cites·17 claims
- 0791US9209300B2Fin field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 8, 2015·8 cites·20 claims
- 0891US8809940B2Fin held effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 19, 2014·8 cites·20 claims
- 0991US8134163B2Light-emitting diodes on concave texture substrateYU CHEN-HUA·Filed 2008·Granted Mar 13, 2012·14 cites·14 claims
- 1089US9379215B2Fin field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 28, 2016·4 cites·20 claims
- 1189US8822290B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 2, 2014·12 cites·20 claims
- 1289US7323162B2Aqueous cosmetic coloring and gloss compositions having film formersAVON PROD INC·Filed 2002·Granted Jan 29, 2008·28 cites·28 claims
- 1388US8659033B2Light-emitting diode with textured substrateYU CHEN-HUA·Filed 2011·Granted Feb 25, 2014·4 cites·15 claims
- 1487US9853102B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 26, 2017·7 cites·20 claims
- 1586US8236583B2Method of separating light-emitting diode from a growth substrateCHEN DING-YUAN·Filed 2009·Granted Aug 7, 2012·5 cites·21 claims
- 1680US9029246B2Methods of forming epitaxial structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 12, 2015·4 cites·20 claims
- 1779US8772831B2III-nitride growth method on silicon substrateCHEN CHI-MING·Filed 2011·Granted Jul 8, 2014·4 cites·22 claims
- 1878US9184289B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 10, 2015·3 cites·20 claims
- 1978US8629037B2Forming a protective film on a back side of a silicon wafer in a III-V family fabrication processNIEH CHUN-FENG·Filed 2011·Granted Jan 14, 2014·5 cites·18 claims
- 2077US9478631B2Vertical-gate-all-around devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·4 cites·19 claims
- 2174US8629013B2Junction leakage reduction through implantationNIEH CHUN-FENG·Filed 2011·Granted Jan 14, 2014·3 cites·18 claims
- 2273US9373755B2Light-emitting diodes on concave texture substrateEPISTAR CORP·Filed 2013·Granted Jun 21, 2016·1 cites·16 claims
- 2370US8791504B2Substrate breakdown voltage improvement for group III-nitride on a silicon substrateCHEN CHI-MING·Filed 2011·Granted Jul 29, 2014·2 cites·20 claims
- 2468US9741800B2III-V multi-channel FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 22, 2017·1 cites·20 claims
- 2567US8486730B2Method of separating light-emitting diode from a growth substrateCHEN DING-YUAN·Filed 2012·Granted Jul 16, 2013·0 cites·20 claims
- 2665US9941394B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 10, 2018·1 cites·20 claims
- 2765US9397169B2Epitaxial structuresTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jul 19, 2016·1 cites·20 claims
- 2865US9130115B2Light-emitting diode with textured substrateTSMC SOLID STATE LIGHTING LTD·Filed 2014·Granted Sep 8, 2015·0 cites·20 claims
- 2964US8779445B2Stress-alleviation layer for LED structuresYU CHEN-HUA·Filed 2008·Granted Jul 15, 2014·2 cites·21 claims
- 3064US8148732B2Carbon-containing semiconductor substrateYU CHEN-HUA·Filed 2009·Granted Apr 3, 2012·1 cites·20 claims
- 3163US8803189B2III-V compound semiconductor epitaxy using lateral overgrowthYU CHEN-HUA·Filed 2009·Granted Aug 12, 2014·1 cites·30 claims
- 3261US9166035B2Delta doping layer in MOSFET source/drain regionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·1 cites·18 claims
- 3356US9224815B2Method of tuning doping concentration in III-V compound semiconductor through co-doping donor and acceptor impuritiesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·0 cites·20 claims
- 3453US9735261B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 15, 2017·0 cites·20 claims
- 3552US9660031B2Integrated circuit device having III-V compound semiconductor region comprising magnesium and N-type impurity and overlying III-V compound semiconductor layer formed without Cp2Mg precursorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·0 cites·20 claims
- 3652US9356102B2Double stepped semiconductor substrateTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·0 cites·20 claims
- 3751US9099311B2Double stepped semiconductor substrateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 4, 2015·0 cites·19 claims
- 3850US2009288860A1Flexible printed circuit and method for making sameCHI MEI COMM SYSTEMS INC·Filed 2008·Application pending·0 cites
- 3947US2010012954A1Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom ElectrodesYU CHEN-HUA·Filed 2008·Application pending·0 cites
- 4046US9412836B2Contacts for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·0 cites·19 claims
- 4145US12487891B2Method for backing up configuration fileMITAC COMPUTING TECH CORP·Filed 2024·Granted Dec 2, 2025·0 cites·6 claims
- 4240US2013140525A1Gallium nitride growth method on silicon substrateCHEN CHI-MING·Filed 2011·Application pending·0 cites
- 4340US2013137238A1Method for forming high mobility channels in iii-v family channel devicesNIEH CHUN-FENG·Filed 2012·Application pending·0 cites
- 4439US2007077217A1Cosmetic compositions having increased color intensity and method for producing sameKING GINGER·Filed 2005·Application pending·0 cites
- 4534US2004056333A1Electromagnetic traps in integrated circuit for minimizing cross-talkFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →