Inventor · disambiguated record
Huanlong Liu
Also filed as: LIU HUANLONG
43 granted patents·5 pending applications·243 citations·filing 2011–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30HEADWAY TECH INC11UNIV NEW YORK5HEADWAY TECHNOLOGIES INC1KENT ANDREW1
Top patents by PatentIndex Score
48 records- 0198US11417835B2Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·5 cites·20 claims
- 0298US10014465B1Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyHEADWAY TECH INC·Filed 2017·Granted Jul 3, 2018·22 cites·13 claims
- 0398US9780299B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2015·Granted Oct 3, 2017·11 cites·19 claims
- 0497US10957851B2Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·6 cites·20 claims
- 0597US10522752B1Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·10 cites·22 claims
- 0696US10665773B2Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·7 cites·20 claims
- 0796US9425387B1Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealingHEADWAY TECH INC·Filed 2015·Granted Aug 23, 2016·59 cites·31 claims
- 0895US9842988B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsHEADWAY TECH INC·Filed 2015·Granted Dec 12, 2017·6 cites·11 claims
- 0995US9673385B1Seed layer for growth of <111> magnetic materialsHEADWAY TECH INC·Filed 2016·Granted Jun 6, 2017·7 cites·25 claims
- 1094US10658577B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·3 cites·20 claims
- 1194US8755222B2Bipolar spin-transfer switchingKENT ANDREW·Filed 2011·Granted Jun 17, 2014·50 cites·18 claims
- 1293US9805816B2Implementation of a one time programmable memory using a MRAM stack designHEADWAY TECH INC·Filed 2016·Granted Oct 31, 2017·15 cites·52 claims
- 1392US10763428B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 1, 2020·3 cites·17 claims
- 1491US2024381779A1Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment EnhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1589US11696511B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
- 1687US10522744B2High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·4 cites·19 claims
- 1787US10115892B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2017·Granted Oct 30, 2018·2 cites·7 claims
- 1885US10522745B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·3 cites·20 claims
- 1985US10431736B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 1, 2019·1 cites·20 claims
- 2084US10230044B2Fully compensated synthetic ferromagnet for spintronics applicationsHEADWAY TECH INC·Filed 2017·Granted Mar 12, 2019·1 cites·8 claims
- 2181US10522747B2Fully compensated synthetic ferromagnet for spintronics applicationsHEADWAY TECH INC·Filed 2019·Granted Dec 31, 2019·3 cites·20 claims
- 2280US10797232B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·3 cites·20 claims
- 2380US8941196B2Precessional reversal in orthogonal spin transfer magnetic RAM devicesUNIV NEW YORK·Filed 2013·Granted Jan 27, 2015·7 cites·20 claims
- 2480US2024381780A1Method for forming a perpendicular spin torque oscillator (psto) including forming a magneto resistive sensor (mr) over a spin torque oscillator (sto)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2579US12167699B2Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
- 2679US11849646B2Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 2779US9449668B2Current induced spin-momentum transfer stack with dual insulating layersUNIV NEW YORK·Filed 2015·Granted Sep 20, 2016·4 cites·20 claims
- 2878US10509074B2Electrical testing apparatus for spintronics devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·28 claims
- 2978US2025338775A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3076US11569441B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
- 3176US11309489B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·15 claims
- 3272US12167701B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·10 claims
- 3371US11573270B2Electrical testing apparatus for spintronics devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 3471US10784310B2Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devicesHEADWAY TECH INC·Filed 2018·Granted Sep 22, 2020·2 cites·41 claims
- 3571US9812184B2Current induced spin-momentum transfer stack with dual insulating layersUNIV NEW YORK·Filed 2016·Granted Nov 7, 2017·3 cites·20 claims
- 3670US12414476B2Method for forming a perpendicular spin torque oscillator (PSTO) including forming a magneto resistive sensor (MR) over a spin torque oscillator (STO)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 9, 2025·0 cites·20 claims
- 3770US12356865B2Multilayer structure for reducing film roughness in magnetic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 8, 2025·0 cites·20 claims
- 3870US11054471B2Electrical testing apparatus for spintronics devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 3969US10325639B2Initialization process for magnetic random access memory (MRAM) productionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 18, 2019·2 cites·20 claims
- 4067US2019088866A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesHEADWAY TECH INC·Filed 2018·Application pending·0 cites
- 4165US11563170B2Fully compensated synthetic ferromagnet for spintronics applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 24, 2023·0 cites·20 claims
- 4261US10867651B2Initialization process for magnetic random access memory (MRAM) productionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 4361US10699765B2Methods and circuits for programming STT-MRAM cells for reducing back-hoppingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·1 cites·17 claims
- 4459US10978124B2Method and circuits for programming STT-MRAM cells for reducing back-hoppingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 13, 2021·0 cites·20 claims
- 4558US2015333254A1Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device ApplicationsHEADWAY TECHNOLOGIES INC·Filed 2014·Application pending·0 cites
- 4657US11956971B2Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·20 claims
- 4747US9236103B2Bipolar spin-transfer switchingUNIV NEW YORK·Filed 2014·Granted Jan 12, 2016·0 cites·17 claims
- 4839US9721631B2Precessional magnetization reversal in a magnetic tunnel junction with a perpendicular polarizerUNIV NEW YORK·Filed 2014·Granted Aug 1, 2017·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Huanlong Liu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →