Inventor · disambiguated record
Hung-Chih Tsai
Also filed as: TSAI HUNG-CHIH
12 granted patents·5 pending applications·37 citations·filing 2002–2024
87Inventor score
Top patents by PatentIndex Score
17 records- 0183US8796084B2Method for removing hard masks on gates in semiconductor manufacturing processTSAI HUNG CHIH·Filed 2010·Granted Aug 5, 2014·9 cites·18 claims
- 0280US11380779B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
- 0379US12317530B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 0477US2024395904A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0573US11764288B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 0666US8349732B2Implanted metal silicide for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jan 8, 2013·3 cites·19 claims
- 0766US7833848B2Method for removing hard masks on gates in semiconductor manufacturing processTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 16, 2010·2 cites·13 claims
- 0863US6815274B1Resist protect oxide structure of sub-micron salicide processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 9, 2004·8 cites·28 claims
- 0962US7091535B2High voltage device embedded non-volatile memory cell and fabrication methodTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 15, 2006·12 cites·26 claims
- 1060US2022367614A1Avalanche-protected transistors using a bottom breakdown current path and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1158US2025212431A1Semiconductor device for high-voltage applicationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1257US2025089311A1High voltage mosfet using shallow-shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1356US11437466B2Avalanche-protected transistors using a bottom breakdown current path and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 1451US9059310B2SRAM devices utilizing strained-channel transistors and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 16, 2015·0 cites·20 claims
- 1549US8624295B2SRAM devices utilizing strained-channel transistors and methods of manufactureCHUANG HARRY·Filed 2008·Granted Jan 7, 2014·0 cites·20 claims
- 1648US7183150B2Resist protect oxide structure of sub-micron salicide processTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 27, 2007·2 cites·21 claims
- 1741US2008254588A1Methods for forming transistors with high-k dielectric layers and transistors formed therefromTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →