Inventor · disambiguated record
Hung-Shern Tsai
Also filed as: TSAI HUNG-SHERN
10 granted patents·16 citations·filing 2008–2012
83Inventor score
Top patents by PatentIndex Score
10 records- 0173US7682955B1Method for forming deep well of power deviceVANGUARD INT SEMICONDUCT CORP·Filed 2008·Granted Mar 23, 2010·4 cites·15 claims
- 0269US7795083B2Semiconductor structure and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Sep 14, 2010·4 cites·16 claims
- 0366US8008687B2Electrostatic discharge protection deviceVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Aug 30, 2011·3 cites·21 claims
- 0464US7875930B2Semiconductor structure having an enlarged finger shaped region for reducing electric field density and method of manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Jan 25, 2011·3 cites·19 claims
- 0563US8232596B2Semiconductor structure and fabrication method thereofTU SHANG-HUI·Filed 2009·Granted Jul 31, 2012·2 cites·7 claims
- 0648US8809950B2Semiconductor structure and fabrication method thereofTU SHANG-HUI·Filed 2012·Granted Aug 19, 2014·0 cites·6 claims
- 0748US8669149B2Semiconductor structure and fabrication method thereofTU SHANG-HUI·Filed 2012·Granted Mar 11, 2014·0 cites·11 claims
- 0844US7838931B2High voltage semiconductor devices with Schottky diodesVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Nov 23, 2010·0 cites·16 claims
- 0937US8125028B2Semiconductor devices for high power applicationTSAI HUNG-SHERN·Filed 2008·Granted Feb 28, 2012·0 cites·7 claims
- 1029US8237239B2Schottky diode device and method for fabricating the samePAI HUANG-LANG·Filed 2009·Granted Aug 7, 2012·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →