Inventor · disambiguated record
Hung Cho Wang
Also filed as: WANG HUNG-CHO
75 granted patents·18 pending applications·221 citations·filing 2013–2025
98Inventor score
Top patents by PatentIndex Score
93 records- 0198US10038137B2MRAM device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·50 cites·20 claims
- 0297US10504958B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·7 cites·20 claims
- 0396US11856868B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0496US11818962B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 0596US11355696B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·5 cites·19 claims
- 0696US10522740B2Techniques for MRAM MTJ top electrode to metal layer interface including spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·14 cites·17 claims
- 0796US9666790B2Manufacturing techniques and corresponding devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·12 cites·20 claims
- 0895US11659775B2Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
- 0995US11551736B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·4 cites·20 claims
- 1095US10790439B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·14 cites·20 claims
- 1195US10164169B2Memory device having a single bottom electrode layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·11 cites·20 claims
- 1295US9780301B1Method for manufacturing mixed-dimension and void-free MRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·18 cites·20 claims
- 1394US11889769B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 1494US11653572B2Manufacturing techniques and corresponding devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·2 cites·20 claims
- 1594US10727274B2Techniques for MRAM top electrode via connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·8 cites·20 claims
- 1693US11322543B2Method for MRAM top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·3 cites·20 claims
- 1792US11785862B2Via landing enhancement for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·2 cites·20 claims
- 1892US11075335B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·7 cites·20 claims
- 1992US9842986B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 12, 2017·8 cites·20 claims
- 2091US10797230B2Techniques for MRAM MTJ top electrode to metal layer interface including spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·5 cites·20 claims
- 2190US11469372B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·2 cites·20 claims
- 2289US11005032B2Techniques for MRAM MTJ top electrode to metal layer interface including spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·4 cites·20 claims
- 2389US10727272B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·4 cites·20 claims
- 2489US10497861B2Manufacturing techniques and corresponding devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 3, 2019·4 cites·20 claims
- 2589US10109790B2Method for manufacturing mixed-dimension and void-free MRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·6 cites·20 claims
- 2689US2025359070A1Method for mram top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2788US11121308B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·3 cites·20 claims
- 2887US12426274B2Method for MRAM top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 2986US12284814B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 3085US12444650B2Etch stop layer for memory device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 3185US12317754B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 3285US12274182B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3384US10636961B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 28, 2020·3 cites·20 claims
- 3484US2025316537A1Semiconductor memory device and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3583US12256647B2Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 3683US11569443B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·1 cites·20 claims
- 3783US11437433B2Techniques for MRAM top electrode via connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·1 cites·20 claims
- 3883US11031543B2Via landing enhancement for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·3 cites·20 claims
- 3983US10937957B2Manufacturing techniques and corresponding devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·2 cites·20 claims
- 4083US10686125B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 4183US2025356898A1Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Operation ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4283US2025220922A1Method for manufacturing a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4382US2025275484A1Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4482US2025140295A1Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4582US2025234791A1Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4681US12329039B2Magnetic tunnel junction structures with protection outer layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 4781US12223989B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 4881US11832529B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 4981US2025311637A1Magnetic tunnel junction structures with protection outer layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5080US11063208B2Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·1 cites·20 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →